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IRFIBC30G

IRFIBC30G

For Reference Only

Part Number IRFIBC30G
PNEDA Part # IRFIBC30G
Description MOSFET N-CH 600V 2.5A TO220FP
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 5,418
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 16 - Apr 21 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IRFIBC30G Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberIRFIBC30G
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IRFIBC30G, IRFIBC30G Datasheet (Total Pages: 8, Size: 928.53 KB)
PDFIRFIBC30G Datasheet Cover
IRFIBC30G Datasheet Page 2 IRFIBC30G Datasheet Page 3 IRFIBC30G Datasheet Page 4 IRFIBC30G Datasheet Page 5 IRFIBC30G Datasheet Page 6 IRFIBC30G Datasheet Page 7 IRFIBC30G Datasheet Page 8

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IRFIBC30G Specifications

ManufacturerVishay Siliconix
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25°C2.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs2.2Ohm @ 1.5A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs31nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds660pF @ 25V
FET Feature-
Power Dissipation (Max)35W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220-3
Package / CaseTO-220-3 Full Pack, Isolated Tab

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