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IRFIB8N50K

IRFIB8N50K

For Reference Only

Part Number IRFIB8N50K
PNEDA Part # IRFIB8N50K
Description MOSFET N-CH 500V 6.7A TO220FP
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 7,902
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 2 - Apr 7 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IRFIB8N50K Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberIRFIB8N50K
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IRFIB8N50K, IRFIB8N50K Datasheet (Total Pages: 8, Size: 139.68 KB)
PDFIRFIB8N50KPBF Datasheet Cover
IRFIB8N50KPBF Datasheet Page 2 IRFIB8N50KPBF Datasheet Page 3 IRFIB8N50KPBF Datasheet Page 4 IRFIB8N50KPBF Datasheet Page 5 IRFIB8N50KPBF Datasheet Page 6 IRFIB8N50KPBF Datasheet Page 7 IRFIB8N50KPBF Datasheet Page 8

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IRFIB8N50K Specifications

ManufacturerVishay Siliconix
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)500V
Current - Continuous Drain (Id) @ 25°C6.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs350mOhm @ 4A, 10V
Vgs(th) (Max) @ Id5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs89nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds2160pF @ 25V
FET Feature-
Power Dissipation (Max)45W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220-3
Package / CaseTO-220-3 Full Pack, Isolated Tab

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