Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

IRFI7440GPBF

IRFI7440GPBF

For Reference Only

Part Number IRFI7440GPBF
PNEDA Part # IRFI7440GPBF
Description MOSFET N-CH 40V 95A
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 3,060
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 2 - Apr 7 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IRFI7440GPBF Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIRFI7440GPBF
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IRFI7440GPBF, IRFI7440GPBF Datasheet (Total Pages: 10, Size: 540.82 KB)
PDFIRFI7440GPBF Datasheet Cover
IRFI7440GPBF Datasheet Page 2 IRFI7440GPBF Datasheet Page 3 IRFI7440GPBF Datasheet Page 4 IRFI7440GPBF Datasheet Page 5 IRFI7440GPBF Datasheet Page 6 IRFI7440GPBF Datasheet Page 7 IRFI7440GPBF Datasheet Page 8 IRFI7440GPBF Datasheet Page 9 IRFI7440GPBF Datasheet Page 10

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • IRFI7440GPBF Datasheet
  • where to find IRFI7440GPBF
  • Infineon Technologies

  • Infineon Technologies IRFI7440GPBF
  • IRFI7440GPBF PDF Datasheet
  • IRFI7440GPBF Stock

  • IRFI7440GPBF Pinout
  • Datasheet IRFI7440GPBF
  • IRFI7440GPBF Supplier

  • Infineon Technologies Distributor
  • IRFI7440GPBF Price
  • IRFI7440GPBF Distributor

IRFI7440GPBF Specifications

ManufacturerInfineon Technologies
SeriesHEXFET®, StrongIRFET™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)40V
Current - Continuous Drain (Id) @ 25°C95A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs2.5mOhm @ 57A, 10V
Vgs(th) (Max) @ Id3.9V @ 100µA
Gate Charge (Qg) (Max) @ Vgs132nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds4549pF @ 25V
FET Feature-
Power Dissipation (Max)42W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220AB Full-Pak
Package / CaseTO-220-3 Full Pack

The Products You May Be Interested In

FQP70N10

ON Semiconductor

Manufacturer

ON Semiconductor

Series

QFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

57A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

23mOhm @ 28.5A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

110nC @ 10V

Vgs (Max)

±25V

Input Capacitance (Ciss) (Max) @ Vds

3300pF @ 25V

FET Feature

-

Power Dissipation (Max)

160W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220-3

Package / Case

TO-220-3

IPW60R045CPFKSA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

CoolMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

650V

Current - Continuous Drain (Id) @ 25°C

60A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

45mOhm @ 44A, 10V

Vgs(th) (Max) @ Id

3.5V @ 3mA

Gate Charge (Qg) (Max) @ Vgs

190nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

6800pF @ 100V

FET Feature

-

Power Dissipation (Max)

431W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

PG-TO247-3

Package / Case

TO-247-3

BUK7Y7R6-40EX

Nexperia

Manufacturer

Nexperia USA Inc.

Series

TrenchMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

40V

Current - Continuous Drain (Id) @ 25°C

79A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

7.6mOhm @ 20A, 10V

Vgs(th) (Max) @ Id

4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

26.2nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1650pF @ 25V

FET Feature

-

Power Dissipation (Max)

94.3W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

LFPAK56, Power-SO8

Package / Case

SC-100, SOT-669

TSM2314CX RFG

Taiwan Semiconductor Corporation

Manufacturer

Taiwan Semiconductor Corporation

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

4.9A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

1.8V, 4.5V

Rds On (Max) @ Id, Vgs

33mOhm @ 4.9A, 4.5V

Vgs(th) (Max) @ Id

1.2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

11nC @ 4.5V

Vgs (Max)

±12V

Input Capacitance (Ciss) (Max) @ Vds

900pF @ 10V

FET Feature

-

Power Dissipation (Max)

1.25W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SOT-23

Package / Case

TO-236-3, SC-59, SOT-23-3

IRFH5250TR2PBF

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

25V

Current - Continuous Drain (Id) @ 25°C

45A (Ta), 100A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

1.15mOhm @ 50A, 10V

Vgs(th) (Max) @ Id

2.35V @ 150µA

Gate Charge (Qg) (Max) @ Vgs

110nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

7174pF @ 13V

FET Feature

-

Power Dissipation (Max)

3.6W (Ta), 160W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-PQFN (5x6)

Package / Case

8-PowerVDFN

Recently Sold

JS28F128J3F75A

JS28F128J3F75A

Micron Technology Inc.

IC FLASH 128M PARALLEL 56TSOP

MAX3224EEAP+T

MAX3224EEAP+T

Maxim Integrated

IC TRANSCEIVER FULL 2/2 20SSOP

FDC6327C

FDC6327C

ON Semiconductor

MOSFET N/P-CH 20V SSOT-6

2EDN7424FXTMA1

2EDN7424FXTMA1

Infineon Technologies

IC GATE DRIVER DSO8

TLP350H(F)

TLP350H(F)

Toshiba Semiconductor and Storage

X36 PB-F PHOTOCOUPLER THRU HOLE

EPM7128STC100-15N

EPM7128STC100-15N

Intel

IC CPLD 128MC 15NS 100TQFP

ES1B-E3/61T

ES1B-E3/61T

Vishay Semiconductor Diodes Division

DIODE GEN PURP 100V 1A DO214AC

WSLP1206R0500FEA

WSLP1206R0500FEA

Vishay Dale

RES 0.05 OHM 1% 1W 1206

7443551131

7443551131

Wurth Electronics

FIXED IND 13UH 10A 11.2 MOHM SMD

LQH43CN100K03L

LQH43CN100K03L

Murata

FIXED IND 10UH 650MA 240 MOHM

MF-MSMF260-2

MF-MSMF260-2

Bourns

PTC RESET FUSE 6V 2.6A 1812

MMBF170

MMBF170

ON Semiconductor

MOSFET N-CH 60V 500MA SOT-23