IRFH3707TRPBF
For Reference Only
| Part Number | IRFH3707TRPBF |
| PNEDA Part # | IRFH3707TRPBF |
| Description | MOSFET N-CH 30V 12A PQFN56 |
| Manufacturer | Infineon Technologies |
| Unit Price | Request a Quote |
| In Stock | 2,916 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Apr 5 - Apr 10 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
|
Free shipping on orders over $100. PNEDA is willing to provide you with better services.
|
|
|
|
|
IRFH3707TRPBF Resources
| Brand | Infineon Technologies |
| ECAD Module |
|
| Mfr. Part Number | IRFH3707TRPBF |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
Payment Method
- Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
- If you need the detailed invoice or tax ID,please email us.
- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
- Please confirm the specifications of the products when ordering.
- If you have special order instructions,please note it on the ordering pages.
- Registered users can log in to the account to view the order status.
- You can email us to change the order details before shipment.
- Orders cannot be canceled after shipping the packages.
At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.
Our approach is built around proving our clients with three key advantages:
Prompt Responsiveness
Our team responds quickly to your requests, and gets to work immediately to find your parts.
Guaranteed Quality
Our quality-control processes guard against counterfeits while ensuring reliability and performance.
Global Access
Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.
Hot search vocabulary
- IRFH3707TRPBF Datasheet
- where to find IRFH3707TRPBF
- Infineon Technologies
- Infineon Technologies IRFH3707TRPBF
- IRFH3707TRPBF PDF Datasheet
- IRFH3707TRPBF Stock
- IRFH3707TRPBF Pinout
- Datasheet IRFH3707TRPBF
- IRFH3707TRPBF Supplier
- Infineon Technologies Distributor
- IRFH3707TRPBF Price
- IRFH3707TRPBF Distributor
IRFH3707TRPBF Specifications
| Manufacturer | Infineon Technologies |
| Series | HEXFET® |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 12A (Ta), 29A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 12.4mOhm @ 12A, 10V |
| Vgs(th) (Max) @ Id | 2.35V @ 25µA |
| Gate Charge (Qg) (Max) @ Vgs | 8.1nC @ 4.5V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 755pF @ 15V |
| FET Feature | - |
| Power Dissipation (Max) | 2.8W (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 8-PQFN (3x3) |
| Package / Case | 8-PowerVDFN |
The Products You May Be Interested In
|
Manufacturer Vishay Semiconductor Diodes Division Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 180A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 6.5mOhm @ 180A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 380nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 10700pF @ 25V FET Feature - Power Dissipation (Max) 480W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Chassis Mount Supplier Device Package SOT-227 Package / Case SOT-227-4, miniBLOC |
Manufacturer ON Semiconductor Series - FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 18A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 140mOhm @ 9A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 38nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 1155pF @ 25V FET Feature - Power Dissipation (Max) 3.8W (Ta), 82W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package D²PAK (TO-263AB) Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Manufacturer Toshiba Semiconductor and Storage Series U-MOSVIII-H FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 200V Current - Continuous Drain (Id) @ 25°C 13A (Ta) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 64mOhm @ 6.5A, 10V Vgs(th) (Max) @ Id 4V @ 300µA Gate Charge (Qg) (Max) @ Vgs 11.2nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 1100pF @ 100V FET Feature - Power Dissipation (Max) 1.6W (Ta), 57W (Tc) Operating Temperature 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 8-SOP Advance (5x5) Package / Case 8-PowerVDFN |
Manufacturer Infineon Technologies Series HEXFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 55V Current - Continuous Drain (Id) @ 25°C 53A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 16.5mOhm @ 28A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 72nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 1696pF @ 25V FET Feature - Power Dissipation (Max) 3.8W (Ta), 107W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package TO-262 Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA |
Manufacturer Infineon Technologies Series HEXFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 20A (Ta) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 4.4mOhm @ 20A, 10V Vgs(th) (Max) @ Id 2.45V @ 250µA Gate Charge (Qg) (Max) @ Vgs 33nC @ 4.5V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 2890pF @ 10V FET Feature - Power Dissipation (Max) 2.5W (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 8-SO Package / Case 8-SOIC (0.154", 3.90mm Width) |
