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IRFD113PBF

IRFD113PBF

For Reference Only

Part Number IRFD113PBF
PNEDA Part # IRFD113PBF
Description MOSFET N-CH 60V 800MA 4-DIP
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 20,136
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 6 - Apr 11 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IRFD113PBF Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberIRFD113PBF
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IRFD113PBF, IRFD113PBF Datasheet (Total Pages: 8, Size: 245.64 KB)
PDFIRFD113 Datasheet Cover
IRFD113 Datasheet Page 2 IRFD113 Datasheet Page 3 IRFD113 Datasheet Page 4 IRFD113 Datasheet Page 5 IRFD113 Datasheet Page 6 IRFD113 Datasheet Page 7 IRFD113 Datasheet Page 8

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IRFD113PBF Specifications

ManufacturerVishay Siliconix
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25°C800mA (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs800mOhm @ 800mA, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs7nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds200pF @ 25V
FET Feature-
Power Dissipation (Max)1W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device Package4-DIP, Hexdip, HVMDIP
Package / Case4-DIP (0.300", 7.62mm)

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