Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

IRFBF20

IRFBF20

For Reference Only

Part Number IRFBF20
PNEDA Part # IRFBF20
Description MOSFET N-CH 900V 1.7A TO-220AB
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 3,150
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 17 - Apr 22 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IRFBF20 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberIRFBF20
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IRFBF20, IRFBF20 Datasheet (Total Pages: 9, Size: 1,130.35 KB)
PDFIRFBF20 Datasheet Cover
IRFBF20 Datasheet Page 2 IRFBF20 Datasheet Page 3 IRFBF20 Datasheet Page 4 IRFBF20 Datasheet Page 5 IRFBF20 Datasheet Page 6 IRFBF20 Datasheet Page 7 IRFBF20 Datasheet Page 8 IRFBF20 Datasheet Page 9

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • IRFBF20 Datasheet
  • where to find IRFBF20
  • Vishay Siliconix

  • Vishay Siliconix IRFBF20
  • IRFBF20 PDF Datasheet
  • IRFBF20 Stock

  • IRFBF20 Pinout
  • Datasheet IRFBF20
  • IRFBF20 Supplier

  • Vishay Siliconix Distributor
  • IRFBF20 Price
  • IRFBF20 Distributor

IRFBF20 Specifications

ManufacturerVishay Siliconix
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)900V
Current - Continuous Drain (Id) @ 25°C1.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs8Ohm @ 1A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs38nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds490pF @ 25V
FET Feature-
Power Dissipation (Max)54W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220AB
Package / CaseTO-220-3

The Products You May Be Interested In

IRFZ34STRR

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

30A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

50mOhm @ 18A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

46nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1200pF @ 25V

FET Feature

-

Power Dissipation (Max)

3.7W (Ta), 88W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D2PAK

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

IPA60R280E6XKSA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

CoolMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

13.8A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

280mOhm @ 6.5A, 10V

Vgs(th) (Max) @ Id

3.5V @ 430µA

Gate Charge (Qg) (Max) @ Vgs

43nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

950pF @ 100V

FET Feature

-

Power Dissipation (Max)

32W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

PG-TO220-FP

Package / Case

TO-220-3 Full Pack

IXTP450P2

IXYS

Manufacturer

IXYS

Series

PolarP2™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

500V

Current - Continuous Drain (Id) @ 25°C

16A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

330mOhm @ 8A, 10V

Vgs(th) (Max) @ Id

4.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

43nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

2530pF @ 25V

FET Feature

-

Power Dissipation (Max)

300W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220AB

Package / Case

TO-220-3

IRF2804PBF

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

40V

Current - Continuous Drain (Id) @ 25°C

75A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

2.3mOhm @ 75A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

240nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

6450pF @ 25V

FET Feature

-

Power Dissipation (Max)

300W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220AB

Package / Case

TO-220-3

NTDV20N06LT4G

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

20A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

5V

Rds On (Max) @ Id, Vgs

48mOhm @ 10A, 5V

Vgs(th) (Max) @ Id

2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

32nC @ 5V

Vgs (Max)

±15V

Input Capacitance (Ciss) (Max) @ Vds

990pF @ 25V

FET Feature

-

Power Dissipation (Max)

1.36W (Ta), 60W (Tj)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

DPAK

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

Recently Sold

FM24W256-GTR

FM24W256-GTR

Cypress Semiconductor

IC FRAM 256K I2C 1MHZ 8SOIC

SP3304NUTG

SP3304NUTG

Littelfuse

TVS DIODE 3.3V 11.5V 10UDFN

GCM1885C1H6R8BA16D

GCM1885C1H6R8BA16D

Murata

CAP CER 6.8PF 50V C0G/NP0 0603

MIC2026-1YM

MIC2026-1YM

Microchip Technology

IC PW DIST SW DUAL 8SOIC

7443551130

7443551130

Wurth Electronics

FIXED IND 1.3UH 25A 1.8 MOHM SMD

PHV-5R4V155-R

PHV-5R4V155-R

Eaton - Electronics Division

CAP 1.5F -10% +30% 5.4V T/H

GP10J-E3/54

GP10J-E3/54

Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 1A DO204AL

SI2300DS-T1-GE3

SI2300DS-T1-GE3

Vishay Siliconix

MOSFET N-CH 30V 3.6A SOT-23

IP4220CZ6,125

IP4220CZ6,125

Nexperia

TVS DIODE 5.5V 6TSOP

BC184B

BC184B

Central Semiconductor Corp

THROUGH-HOLE TRANSISTOR-SMALL SI

2N6433

2N6433

Central Semiconductor Corp

THROUGH-HOLE TRANSISTOR-SMALL SI

USBUF01W6

USBUF01W6

STMicroelectronics

FILTER RC(PI) 33 OHM/47PF SMD