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IRFBE30STRR

IRFBE30STRR

For Reference Only

Part Number IRFBE30STRR
PNEDA Part # IRFBE30STRR
Description MOSFET N-CH 800V 4.1A D2PAK
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 5,940
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 4 - Apr 9 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IRFBE30STRR Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberIRFBE30STRR
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IRFBE30STRR, IRFBE30STRR Datasheet (Total Pages: 6, Size: 167.57 KB)
PDFIRFBE30STRR Datasheet Cover
IRFBE30STRR Datasheet Page 2 IRFBE30STRR Datasheet Page 3 IRFBE30STRR Datasheet Page 4 IRFBE30STRR Datasheet Page 5 IRFBE30STRR Datasheet Page 6

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IRFBE30STRR Specifications

ManufacturerVishay Siliconix
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)800V
Current - Continuous Drain (Id) @ 25°C4.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs3Ohm @ 2.5A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs78nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1300pF @ 25V
FET Feature-
Power Dissipation (Max)125W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD2PAK
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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