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IRF9Z34NSTRR

IRF9Z34NSTRR

For Reference Only

Part Number IRF9Z34NSTRR
PNEDA Part # IRF9Z34NSTRR
Description MOSFET P-CH 55V 19A D2PAK
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 7,380
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 2 - Apr 7 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IRF9Z34NSTRR Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIRF9Z34NSTRR
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IRF9Z34NSTRR, IRF9Z34NSTRR Datasheet (Total Pages: 11, Size: 167.41 KB)
PDFIRF9Z34NSTRR Datasheet Cover
IRF9Z34NSTRR Datasheet Page 2 IRF9Z34NSTRR Datasheet Page 3 IRF9Z34NSTRR Datasheet Page 4 IRF9Z34NSTRR Datasheet Page 5 IRF9Z34NSTRR Datasheet Page 6 IRF9Z34NSTRR Datasheet Page 7 IRF9Z34NSTRR Datasheet Page 8 IRF9Z34NSTRR Datasheet Page 9 IRF9Z34NSTRR Datasheet Page 10 IRF9Z34NSTRR Datasheet Page 11

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IRF9Z34NSTRR Specifications

ManufacturerInfineon Technologies
SeriesHEXFET®
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)55V
Current - Continuous Drain (Id) @ 25°C19A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs100mOhm @ 10A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs35nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds620pF @ 25V
FET Feature-
Power Dissipation (Max)3.8W (Ta), 68W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD2PAK
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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