Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

IRF9953TR

IRF9953TR

For Reference Only

Part Number IRF9953TR
PNEDA Part # IRF9953TR
Description MOSFET 2P-CH 30V 2.3A 8-SOIC
Manufacturer Infineon Technologies
Unit Price
1 ---------- $5.2621
250 ---------- $5.0154
500 ---------- $4.7688
1,000 ---------- $4.5221
2,500 ---------- $4.3166
5,000 ---------- $4.1110
In Stock 10,503
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 31 - Apr 5 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IRF9953TR Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIRF9953TR
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Arrays
Datasheet
IRF9953TR, IRF9953TR Datasheet (Total Pages: 7, Size: 107.4 KB)
PDFIRF9953TR Datasheet Cover
IRF9953TR Datasheet Page 2 IRF9953TR Datasheet Page 3 IRF9953TR Datasheet Page 4 IRF9953TR Datasheet Page 5 IRF9953TR Datasheet Page 6 IRF9953TR Datasheet Page 7

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • IRF9953TR Datasheet
  • where to find IRF9953TR
  • Infineon Technologies

  • Infineon Technologies IRF9953TR
  • IRF9953TR PDF Datasheet
  • IRF9953TR Stock

  • IRF9953TR Pinout
  • Datasheet IRF9953TR
  • IRF9953TR Supplier

  • Infineon Technologies Distributor
  • IRF9953TR Price
  • IRF9953TR Distributor

IRF9953TR Specifications

ManufacturerInfineon Technologies
SeriesHEXFET®
FET Type2 P-Channel (Dual)
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C2.3A
Rds On (Max) @ Id, Vgs250mOhm @ 1A, 10V
Vgs(th) (Max) @ Id1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs12nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds190pF @ 15V
Power - Max2W
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / Case8-SOIC (0.154", 3.90mm Width)
Supplier Device Package8-SO

The Products You May Be Interested In

APTM50DUM17G

Microsemi

Manufacturer

Microsemi Corporation

Series

-

FET Type

2 N-Channel (Dual)

FET Feature

Standard

Drain to Source Voltage (Vdss)

500V

Current - Continuous Drain (Id) @ 25°C

180A

Rds On (Max) @ Id, Vgs

20mOhm @ 90A, 10V

Vgs(th) (Max) @ Id

5V @ 10mA

Gate Charge (Qg) (Max) @ Vgs

560nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds

28000pF @ 25V

Power - Max

1250W

Operating Temperature

-40°C ~ 150°C (TJ)

Mounting Type

Chassis Mount

Package / Case

SP6

Supplier Device Package

SP6

HAT2210RWS-E

Renesas Electronics America

Manufacturer

Renesas Electronics America

Series

-

FET Type

2 N-Channel (Dual), Schottky

FET Feature

Logic Level Gate, 4.5V Drive

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

7.5A (Ta), 8A (Ta)

Rds On (Max) @ Id, Vgs

24mOhm @ 3.75A, 10V, 22mOhm @ 4A, 10V

Vgs(th) (Max) @ Id

2.5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

4.6nC @ 4.5V, 11nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds

630pF @ 10V, 1330pF @ 10V

Power - Max

1.5W (Ta)

Operating Temperature

150°C

Mounting Type

Surface Mount

Package / Case

8-SOIC (0.154", 3.90mm Width)

Supplier Device Package

8-SOP

SI3981DV-T1-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

2 P-Channel (Dual)

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

1.6A

Rds On (Max) @ Id, Vgs

185mOhm @ 1.9A, 4.5V

Vgs(th) (Max) @ Id

1.1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

5nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds

-

Power - Max

800mW

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

SOT-23-6 Thin, TSOT-23-6

Supplier Device Package

6-TSOP

NTQD6866R2G

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

2 N-Channel (Dual)

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

4.7A

Rds On (Max) @ Id, Vgs

32mOhm @ 6.9A, 4.5V

Vgs(th) (Max) @ Id

1.2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

22nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds

1400pF @ 16V

Power - Max

940mW

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

8-TSSOP (0.173", 4.40mm Width)

Supplier Device Package

8-TSSOP

IRF7389TR

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N and P-Channel

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

-

Rds On (Max) @ Id, Vgs

29mOhm @ 5.8A, 10V

Vgs(th) (Max) @ Id

1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

33nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds

650pF @ 25V

Power - Max

2.5W

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

8-SOIC (0.154", 3.90mm Width)

Supplier Device Package

8-SO

Recently Sold

W681360WG

W681360WG

Nuvoton Technology

IC VOICEBND CODEC 3V 1CH 20TSSOP

LTC3780EG#PBF

LTC3780EG#PBF

Linear Technology/Analog Devices

IC REG CTRLR BUCK-BOOST 24SSOP

SUCS62405C

SUCS62405C

Cosel

DC DC CONVERTER 5V

MAX15006AATT/V+T

MAX15006AATT/V+T

Maxim Integrated

IC REG LINEAR 3.3V 50MA 6TDFN

W25X40CLSSIG

W25X40CLSSIG

Winbond Electronics

IC FLASH 4M SPI 104MHZ 8SOIC

MAX238CWG

MAX238CWG

Maxim Integrated

IC TRANSCEIVER FULL 4/4 24SOIC

BA2904SFV-E2

BA2904SFV-E2

Rohm Semiconductor

IC OPAMP GP 2 CIRCUIT 8SSOPB

TAJE477K010RNJ

TAJE477K010RNJ

CAP TANT 470UF 10% 10V 2917

C0805C102K2GECAUTO

C0805C102K2GECAUTO

KEMET

CAP CER 0805 1NF 200V C0G 10%

SMBJ5.0CA

SMBJ5.0CA

TVS DIODE 5V 9.2V SMB

STM32L476VGT6

STM32L476VGT6

STMicroelectronics

IC MCU 32BIT 1MB FLASH 100LQFP

XC3S200AN-4FTG256C

XC3S200AN-4FTG256C

Xilinx

IC FPGA 195 I/O 256FTBGA