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IRF9952TR

IRF9952TR

For Reference Only

Part Number IRF9952TR
PNEDA Part # IRF9952TR
Description MOSFET N/P-CH 30V 8-SOIC
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 7,614
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 25 - Nov 30 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IRF9952TR Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIRF9952TR
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Arrays
Datasheet
IRF9952TR, IRF9952TR Datasheet (Total Pages: 10, Size: 287.61 KB)
PDFIRF9952TR Datasheet Cover
IRF9952TR Datasheet Page 2 IRF9952TR Datasheet Page 3 IRF9952TR Datasheet Page 4 IRF9952TR Datasheet Page 5 IRF9952TR Datasheet Page 6 IRF9952TR Datasheet Page 7 IRF9952TR Datasheet Page 8 IRF9952TR Datasheet Page 9 IRF9952TR Datasheet Page 10

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IRF9952TR Specifications

ManufacturerInfineon Technologies
SeriesHEXFET®
FET TypeN and P-Channel
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C3.5A, 2.3A
Rds On (Max) @ Id, Vgs100mOhm @ 2.2A, 10V
Vgs(th) (Max) @ Id1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs14nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds190pF @ 15V
Power - Max2W
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / Case8-SOIC (0.154", 3.90mm Width)
Supplier Device Package8-SO

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