Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

IRF9520NSTRR

IRF9520NSTRR

For Reference Only

Part Number IRF9520NSTRR
PNEDA Part # IRF9520NSTRR
Description MOSFET P-CH 100V 6.8A D2PAK
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 2,304
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Feb 18 - Feb 23 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IRF9520NSTRR Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIRF9520NSTRR
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IRF9520NSTRR, IRF9520NSTRR Datasheet (Total Pages: 11, Size: 160.85 KB)
PDFIRF9520NSTRR Datasheet Cover
IRF9520NSTRR Datasheet Page 2 IRF9520NSTRR Datasheet Page 3 IRF9520NSTRR Datasheet Page 4 IRF9520NSTRR Datasheet Page 5 IRF9520NSTRR Datasheet Page 6 IRF9520NSTRR Datasheet Page 7 IRF9520NSTRR Datasheet Page 8 IRF9520NSTRR Datasheet Page 9 IRF9520NSTRR Datasheet Page 10 IRF9520NSTRR Datasheet Page 11

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • IRF9520NSTRR Datasheet
  • where to find IRF9520NSTRR
  • Infineon Technologies

  • Infineon Technologies IRF9520NSTRR
  • IRF9520NSTRR PDF Datasheet
  • IRF9520NSTRR Stock

  • IRF9520NSTRR Pinout
  • Datasheet IRF9520NSTRR
  • IRF9520NSTRR Supplier

  • Infineon Technologies Distributor
  • IRF9520NSTRR Price
  • IRF9520NSTRR Distributor

IRF9520NSTRR Specifications

ManufacturerInfineon Technologies
SeriesHEXFET®
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C6.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs480mOhm @ 4A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs27nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds350pF @ 25V
FET Feature-
Power Dissipation (Max)3.8W (Ta), 48W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD2PAK
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

The Products You May Be Interested In

HUF75307D3

ON Semiconductor

Manufacturer

ON Semiconductor

Series

UltraFET™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

55V

Current - Continuous Drain (Id) @ 25°C

15A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

90mOhm @ 15A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

20nC @ 20V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

250pF @ 25V

FET Feature

-

Power Dissipation (Max)

45W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

I-PAK

Package / Case

TO-251-3 Short Leads, IPak, TO-251AA

STU9N60M2

STMicroelectronics

Manufacturer

STMicroelectronics

Series

MDmesh™ II Plus

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

5.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

780mOhm @ 3A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

10nC @ 10V

Vgs (Max)

±25V

Input Capacitance (Ciss) (Max) @ Vds

320pF @ 100V

FET Feature

-

Power Dissipation (Max)

60W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

IPAK (TO-251)

Package / Case

TO-251-3 Short Leads, IPak, TO-251AA

STP5NK100Z

STMicroelectronics

Manufacturer

STMicroelectronics

Series

SuperMESH3™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

1000V

Current - Continuous Drain (Id) @ 25°C

3.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

3.7Ohm @ 1.75A, 10V

Vgs(th) (Max) @ Id

4.5V @ 100µA

Gate Charge (Qg) (Max) @ Vgs

59nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

1154pF @ 25V

FET Feature

-

Power Dissipation (Max)

125W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220AB

Package / Case

TO-220-3

SIRA84DP-T1-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET® Gen IV

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

60A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

4.6mOhm @ 15A, 10V

Vgs(th) (Max) @ Id

2.4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

38nC @ 10V

Vgs (Max)

+20V, -16V

Input Capacitance (Ciss) (Max) @ Vds

1535pF @ 15V

FET Feature

-

Power Dissipation (Max)

34.7W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PowerPAK® SO-8

Package / Case

PowerPAK® SO-8

AOI4286

Alpha & Omega Semiconductor

Manufacturer

Alpha & Omega Semiconductor Inc.

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

4A (Ta), 14A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

68mOhm @ 5A, 10V

Vgs(th) (Max) @ Id

2.9V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

10nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

390pF @ 50V

FET Feature

-

Power Dissipation (Max)

2.5W (Ta), 30W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-251A

Package / Case

TO-251-3 Stub Leads, IPak

Recently Sold

AZ1117EH-3.3TRG1

AZ1117EH-3.3TRG1

Diodes Incorporated

IC REG LINEAR 3.3V 1A SOT223

TN2404K-T1-E3

TN2404K-T1-E3

Vishay Siliconix

MOSFET N-CH 240V 200MA SOT23-3

AD8603AUJZ-REEL7

AD8603AUJZ-REEL7

Analog Devices

IC OPAMP GP 1 CIRCUIT TSOT5

S25FL256SAGMFI000

S25FL256SAGMFI000

Cypress Semiconductor

IC FLASH 256M SPI 133MHZ 16SOIC

DS1339U-33+

DS1339U-33+

Maxim Integrated

IC RTC CLK/CALENDAR I2C 8-USOP

BZT52C8V2S-7-F

BZT52C8V2S-7-F

Diodes Incorporated

DIODE ZENER 8.2V 200MW SOD323

LM393DR

LM393DR

Rohm Semiconductor

IC COMPARATOR DUAL 0.8MA 8-SOIC

PME271Y447MR30

PME271Y447MR30

KEMET

CAP FILM 4700PF 20% 1KVDC RADIAL

MAX6675ISA+T

MAX6675ISA+T

Maxim Integrated

IC THERMOCOUP TO DGTL 8-SOIC

MB96F673ABPMC-GSE1

MB96F673ABPMC-GSE1

Cypress Semiconductor

IC MCU 16BIT 96KB FLASH 64LQFP

MAX16025TE+

MAX16025TE+

Maxim Integrated

IC SUPERVISORY CIRC DL 16TQFN

TZR1R080A001R00

TZR1R080A001R00

Murata

CAP TRIMMER 3-8PF 25V SMD