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IRF7779L2TR1PBF

IRF7779L2TR1PBF

For Reference Only

Part Number IRF7779L2TR1PBF
PNEDA Part # IRF7779L2TR1PBF
Description MOSFET N-CH 150V 375A DIRECTFET
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 7,722
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 28 - Dec 3 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IRF7779L2TR1PBF Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIRF7779L2TR1PBF
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

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IRF7779L2TR1PBF Specifications

ManufacturerInfineon Technologies
SeriesHEXFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)150V
Current - Continuous Drain (Id) @ 25°C375A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs11mOhm @ 40A, 10V
Vgs(th) (Max) @ Id5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs150nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds6660pF @ 25V
FET Feature-
Power Dissipation (Max)3.3W (Ta), 125W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageDIRECTFET L8
Package / CaseDirectFET™ Isometric L8

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