Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

IRF7580MTRPBF

IRF7580MTRPBF

For Reference Only

Part Number IRF7580MTRPBF
PNEDA Part # IRF7580MTRPBF
Description MOSFET N-CH 60V 114A DIRECTFET
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 2,520
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 27 - Dec 2 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IRF7580MTRPBF Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIRF7580MTRPBF
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IRF7580MTRPBF, IRF7580MTRPBF Datasheet (Total Pages: 11, Size: 510.18 KB)
PDFIRF7580MTRPBF Datasheet Cover
IRF7580MTRPBF Datasheet Page 2 IRF7580MTRPBF Datasheet Page 3 IRF7580MTRPBF Datasheet Page 4 IRF7580MTRPBF Datasheet Page 5 IRF7580MTRPBF Datasheet Page 6 IRF7580MTRPBF Datasheet Page 7 IRF7580MTRPBF Datasheet Page 8 IRF7580MTRPBF Datasheet Page 9 IRF7580MTRPBF Datasheet Page 10 IRF7580MTRPBF Datasheet Page 11

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • IRF7580MTRPBF Datasheet
  • where to find IRF7580MTRPBF
  • Infineon Technologies

  • Infineon Technologies IRF7580MTRPBF
  • IRF7580MTRPBF PDF Datasheet
  • IRF7580MTRPBF Stock

  • IRF7580MTRPBF Pinout
  • Datasheet IRF7580MTRPBF
  • IRF7580MTRPBF Supplier

  • Infineon Technologies Distributor
  • IRF7580MTRPBF Price
  • IRF7580MTRPBF Distributor

IRF7580MTRPBF Specifications

ManufacturerInfineon Technologies
SeriesStrongIRFET™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25°C114A (Tc)
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Rds On (Max) @ Id, Vgs3.6mOhm @ 70A, 10V
Vgs(th) (Max) @ Id3.7V @ 150µA
Gate Charge (Qg) (Max) @ Vgs180nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds6510pF @ 25V
FET Feature-
Power Dissipation (Max)115W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageDirectFET™ Isometric ME
Package / CaseDirectFET™ Isometric ME

The Products You May Be Interested In

CSD23381F4

Texas Instruments

Manufacturer

Series

NexFET™

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

12V

Current - Continuous Drain (Id) @ 25°C

2.3A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

1.8V, 4.5V

Rds On (Max) @ Id, Vgs

175mOhm @ 500mA, 4.5V

Vgs(th) (Max) @ Id

1.2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

1.14nC @ 4.5V

Vgs (Max)

-8V

Input Capacitance (Ciss) (Max) @ Vds

236pF @ 6V

FET Feature

-

Power Dissipation (Max)

500mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

3-PICOSTAR

Package / Case

3-XFDFN

FDU6296

ON Semiconductor

Manufacturer

ON Semiconductor

Series

PowerTrench®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

15A (Ta), 50A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

8.8mOhm @ 15A, 10V

Vgs(th) (Max) @ Id

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

31.5nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1440pF @ 15V

FET Feature

-

Power Dissipation (Max)

3.8W (Ta), 52W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

I-PAK

Package / Case

TO-251-3 Short Leads, IPak, TO-251AA

SI7121DN-T1-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

16A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

18mOhm @ 10A, 10V

Vgs(th) (Max) @ Id

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

65nC @ 10V

Vgs (Max)

±25V

Input Capacitance (Ciss) (Max) @ Vds

1960pF @ 15V

FET Feature

-

Power Dissipation (Max)

3.7W (Ta), 52W (Tc)

Operating Temperature

-50°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PowerPAK® 1212-8

Package / Case

PowerPAK® 1212-8

Manufacturer

IXYS

Series

HiPerFET™, PolarP2™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

1000V

Current - Continuous Drain (Id) @ 25°C

32A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

320mOhm @ 16A, 10V

Vgs(th) (Max) @ Id

6.5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

225nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

14200pF @ 25V

FET Feature

-

Power Dissipation (Max)

960W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

PLUS247™-3

Package / Case

TO-247-3

IRFH4213DTRPBF

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

25V

Current - Continuous Drain (Id) @ 25°C

40A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

1.35mOhm @ 50A, 10V

Vgs(th) (Max) @ Id

2.1V @ 100µA

Gate Charge (Qg) (Max) @ Vgs

55nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

3520pF @ 13V

FET Feature

-

Power Dissipation (Max)

3.6W (Ta), 96W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PQFN (5x6)

Package / Case

8-PowerTDFN

Recently Sold

ADG506AKR

ADG506AKR

Analog Devices

IC MULTIPLEXER 16X1 28SOIC

TAJB107M006RNJ

TAJB107M006RNJ

CAP TANT 100UF 20% 6.3V 1411

SM05T1G

SM05T1G

ON Semiconductor

TVS DIODE 5V 9.8V SOT23-3

MAX1111CPE+

MAX1111CPE+

Maxim Integrated

IC ADC 8BIT SAR 16DIP

BZT52C4V3-7

BZT52C4V3-7

Diodes Incorporated

DIODE ZENER 4.3V 500MW SOD123

XC7Z020-1CLG400C

XC7Z020-1CLG400C

Xilinx

IC SOC CORTEX-A9 667MHZ 400BGA

SMAJ36CA

SMAJ36CA

Littelfuse

TVS DIODE 36V 58.1V DO214AC

MBR0580-TP

MBR0580-TP

Micro Commercial Co

DIODE SCHOTTKY 80V 500MA SOD123

PI3USB30532ZLE

PI3USB30532ZLE

Diodes Incorporated

IC MUX/DEMUX USB 3.0 40TQFN

DF10M

DF10M

Diodes Incorporated

BRIDGE RECT 1PHASE 1KV 1A DFM

APT8024JLL

APT8024JLL

Microsemi

MOSFET N-CH 800V 29A SOT-227

MCP73832T-2ATI/OT

MCP73832T-2ATI/OT

Microchip Technology

IC LI-ION/LI-POLY CTRLR SOT23-5