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IRF7507PBF

IRF7507PBF

For Reference Only

Part Number IRF7507PBF
PNEDA Part # IRF7507PBF
Description MOSFET N/P-CH DUAL 20V MICRO-8
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 7,686
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 27 - Dec 2 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IRF7507PBF Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIRF7507PBF
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Arrays

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IRF7507PBF Specifications

ManufacturerInfineon Technologies
SeriesHEXFET®
FET TypeN and P-Channel
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C2.4A, 1.7A
Rds On (Max) @ Id, Vgs140mOhm @ 1.7A, 4.5V
Vgs(th) (Max) @ Id700mV @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs8nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds260pF @ 15V
Power - Max1.25W
Operating Temperature-
Mounting TypeSurface Mount
Package / Case8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Supplier Device PackageMicro8™

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Current - Continuous Drain (Id) @ 25°C

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Rds On (Max) @ Id, Vgs

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Drain to Source Voltage (Vdss)

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Current - Continuous Drain (Id) @ 25°C

1.34A (Ta), 1.14A (Ta)

Rds On (Max) @ Id, Vgs

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Vgs(th) (Max) @ Id

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Gate Charge (Qg) (Max) @ Vgs

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Input Capacitance (Ciss) (Max) @ Vds

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Rds On (Max) @ Id, Vgs

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Vgs(th) (Max) @ Id

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Gate Charge (Qg) (Max) @ Vgs

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Input Capacitance (Ciss) (Max) @ Vds

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Gate Charge (Qg) (Max) @ Vgs

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Input Capacitance (Ciss) (Max) @ Vds

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Power - Max

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Current - Continuous Drain (Id) @ 25°C

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