Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

IRF7477TRPBF

IRF7477TRPBF

For Reference Only

Part Number IRF7477TRPBF
PNEDA Part # IRF7477TRPBF
Description MOSFET N-CH 30V 14A 8-SOIC
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 3,598
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 3 - Apr 8 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IRF7477TRPBF Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIRF7477TRPBF
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IRF7477TRPBF, IRF7477TRPBF Datasheet (Total Pages: 8, Size: 125.81 KB)
PDFIRF7477PBF Datasheet Cover
IRF7477PBF Datasheet Page 2 IRF7477PBF Datasheet Page 3 IRF7477PBF Datasheet Page 4 IRF7477PBF Datasheet Page 5 IRF7477PBF Datasheet Page 6 IRF7477PBF Datasheet Page 7 IRF7477PBF Datasheet Page 8

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • IRF7477TRPBF Datasheet
  • where to find IRF7477TRPBF
  • Infineon Technologies

  • Infineon Technologies IRF7477TRPBF
  • IRF7477TRPBF PDF Datasheet
  • IRF7477TRPBF Stock

  • IRF7477TRPBF Pinout
  • Datasheet IRF7477TRPBF
  • IRF7477TRPBF Supplier

  • Infineon Technologies Distributor
  • IRF7477TRPBF Price
  • IRF7477TRPBF Distributor

IRF7477TRPBF Specifications

ManufacturerInfineon Technologies
SeriesHEXFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C14A (Ta)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs8.5mOhm @ 14A, 10V
Vgs(th) (Max) @ Id2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs38nC @ 4.5V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds2710pF @ 15V
FET Feature-
Power Dissipation (Max)2.5W (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package8-SO
Package / Case8-SOIC (0.154", 3.90mm Width)

The Products You May Be Interested In

DMT3008LFDF-7

Diodes Incorporated

Manufacturer

Diodes Incorporated

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

12A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

10mOhm @ 9A, 10V

Vgs(th) (Max) @ Id

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

14nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

886pF @ 15V

FET Feature

-

Power Dissipation (Max)

800mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

U-DFN2020-6 (Type F)

Package / Case

6-UDFN Exposed Pad

ZXMN2B14FHTA

Diodes Incorporated

Manufacturer

Diodes Incorporated

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

3.5A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

1.8V, 4.5V

Rds On (Max) @ Id, Vgs

55mOhm @ 3.5A, 4.5V

Vgs(th) (Max) @ Id

1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

11nC @ 4.5V

Vgs (Max)

±8V

Input Capacitance (Ciss) (Max) @ Vds

872pF @ 10V

FET Feature

-

Power Dissipation (Max)

1W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SOT-23-3

Package / Case

TO-236-3, SC-59, SOT-23-3

BUK762R0-40E,118

Nexperia

Manufacturer

Nexperia USA Inc.

Series

Automotive, AEC-Q101, TrenchMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

40V

Current - Continuous Drain (Id) @ 25°C

120A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

2mOhm @ 25A, 10V

Vgs(th) (Max) @ Id

4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

109.2nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

8500pF @ 25V

FET Feature

-

Power Dissipation (Max)

293W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D2PAK

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

SSM3J117TU,LF

Toshiba Semiconductor and Storage

Manufacturer

Toshiba Semiconductor and Storage

Series

U-MOSII

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

2A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4V, 10V

Rds On (Max) @ Id, Vgs

117mOhm @ 1A, 10V

Vgs(th) (Max) @ Id

2.6V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

280pF @ 15V

FET Feature

-

Power Dissipation (Max)

500mW (Ta)

Operating Temperature

150°C

Mounting Type

Surface Mount

Supplier Device Package

UFM

Package / Case

3-SMD, Flat Leads

BUK9277-55A,118

Nexperia

Manufacturer

Nexperia USA Inc.

Series

Automotive, AEC-Q101, TrenchMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

55V

Current - Continuous Drain (Id) @ 25°C

18A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

69mOhm @ 10A, 10V

Vgs(th) (Max) @ Id

2V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

11nC @ 5V

Vgs (Max)

±15V

Input Capacitance (Ciss) (Max) @ Vds

643pF @ 25V

FET Feature

-

Power Dissipation (Max)

51W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

DPAK

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

Recently Sold

B39162B4300F210

B39162B4300F210

Qualcomm

FILTER SAW 1.575GHZ 5SMD

PIC18LF1320-I/P

PIC18LF1320-I/P

Microchip Technology

IC MCU 8BIT 8KB FLASH 18DIP

OP27GSZ

OP27GSZ

Analog Devices

IC OPAMP GP 1 CIRCUIT 8SOIC

STGW45HF60WDI

STGW45HF60WDI

STMicroelectronics

IGBT 600V 70A 250W TO247

BAV70LT1G

BAV70LT1G

ON Semiconductor

DIODE ARRAY GP 100V 200MA SOT23

TPSC107M016R0200

TPSC107M016R0200

CAP TANT 100UF 20% 16V 2312

SRV05-4.TCT

SRV05-4.TCT

Semtech

TVS DIODE 5V 17.5V SOT23-6

SMAJ6.0A

SMAJ6.0A

Bourns

TVS DIODE 6V 10.3V SMA

DS1230Y-150

DS1230Y-150

Maxim Integrated

IC NVSRAM 256K PARALLEL 28EDIP

EPM1270F256C5N

EPM1270F256C5N

Intel

IC CPLD 980MC 6.2NS 256FBGA

NC7SB3157P6X

NC7SB3157P6X

ON Semiconductor

IC SWITCH SPDT SC70-6

ATMEGA2561-16AI

ATMEGA2561-16AI

Microchip Technology

IC MCU 8BIT 256KB FLASH 64TQFP