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IRF7477PBF

IRF7477PBF

For Reference Only

Part Number IRF7477PBF
PNEDA Part # IRF7477PBF
Description MOSFET N-CH 30V 14A 8-SOIC
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 6,732
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 16 - Mar 21 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IRF7477PBF Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIRF7477PBF
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IRF7477PBF, IRF7477PBF Datasheet (Total Pages: 8, Size: 125.81 KB)
PDFIRF7477PBF Datasheet Cover
IRF7477PBF Datasheet Page 2 IRF7477PBF Datasheet Page 3 IRF7477PBF Datasheet Page 4 IRF7477PBF Datasheet Page 5 IRF7477PBF Datasheet Page 6 IRF7477PBF Datasheet Page 7 IRF7477PBF Datasheet Page 8

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IRF7477PBF Specifications

ManufacturerInfineon Technologies
SeriesHEXFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C14A (Ta)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs8.5mOhm @ 14A, 10V
Vgs(th) (Max) @ Id2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs38nC @ 4.5V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds2710pF @ 15V
FET Feature-
Power Dissipation (Max)2.5W (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package8-SO
Package / Case8-SOIC (0.154", 3.90mm Width)

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