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IRF7465

IRF7465

For Reference Only

Part Number IRF7465
PNEDA Part # IRF7465
Description MOSFET N-CH 150V 1.9A 8-SOIC
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 4,248
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Dec 1 - Dec 6 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IRF7465 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIRF7465
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IRF7465, IRF7465 Datasheet (Total Pages: 8, Size: 106.61 KB)
PDFIRF7465 Datasheet Cover
IRF7465 Datasheet Page 2 IRF7465 Datasheet Page 3 IRF7465 Datasheet Page 4 IRF7465 Datasheet Page 5 IRF7465 Datasheet Page 6 IRF7465 Datasheet Page 7 IRF7465 Datasheet Page 8

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IRF7465 Specifications

ManufacturerInfineon Technologies
SeriesHEXFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)150V
Current - Continuous Drain (Id) @ 25°C1.9A (Ta)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs280mOhm @ 1.14A, 10V
Vgs(th) (Max) @ Id5.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs15nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds330pF @ 25V
FET Feature-
Power Dissipation (Max)2.5W (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package8-SO
Package / Case8-SOIC (0.154", 3.90mm Width)

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