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IRF7353D1PBF

IRF7353D1PBF

For Reference Only

Part Number IRF7353D1PBF
PNEDA Part # IRF7353D1PBF
Description MOSFET N-CH 30V 6.5A 8-SOIC
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 7,722
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 3 - Apr 8 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IRF7353D1PBF Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIRF7353D1PBF
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IRF7353D1PBF, IRF7353D1PBF Datasheet (Total Pages: 8, Size: 164.83 KB)
PDFIRF7353D1PBF Datasheet Cover
IRF7353D1PBF Datasheet Page 2 IRF7353D1PBF Datasheet Page 3 IRF7353D1PBF Datasheet Page 4 IRF7353D1PBF Datasheet Page 5 IRF7353D1PBF Datasheet Page 6 IRF7353D1PBF Datasheet Page 7 IRF7353D1PBF Datasheet Page 8

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IRF7353D1PBF Specifications

ManufacturerInfineon Technologies
SeriesFETKY™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C6.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs32mOhm @ 5.8A, 10V
Vgs(th) (Max) @ Id1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs33nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds650pF @ 25V
FET FeatureSchottky Diode (Isolated)
Power Dissipation (Max)2W (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package8-SO
Package / Case8-SOIC (0.154", 3.90mm Width)

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