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IRF6722STR1PBF

IRF6722STR1PBF

For Reference Only

Part Number IRF6722STR1PBF
PNEDA Part # IRF6722STR1PBF
Description MOSFET N-CH 30V 13A DIRECTFET
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 8,136
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 30 - Dec 5 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IRF6722STR1PBF Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIRF6722STR1PBF
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IRF6722STR1PBF, IRF6722STR1PBF Datasheet (Total Pages: 9, Size: 264.87 KB)
PDFIRF6722STRPBF Datasheet Cover
IRF6722STRPBF Datasheet Page 2 IRF6722STRPBF Datasheet Page 3 IRF6722STRPBF Datasheet Page 4 IRF6722STRPBF Datasheet Page 5 IRF6722STRPBF Datasheet Page 6 IRF6722STRPBF Datasheet Page 7 IRF6722STRPBF Datasheet Page 8 IRF6722STRPBF Datasheet Page 9

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IRF6722STR1PBF Specifications

ManufacturerInfineon Technologies
SeriesHEXFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C13A (Ta), 58A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs7.3mOhm @ 13A, 10V
Vgs(th) (Max) @ Id2.4V @ 50µA
Gate Charge (Qg) (Max) @ Vgs17nC @ 4.5V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1320pF @ 15V
FET Feature-
Power Dissipation (Max)2.2W (Ta), 42W (Tc)
Operating Temperature-40°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageDIRECTFET™ ST
Package / CaseDirectFET™ Isometric ST

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