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IRF6720S2TR1PBF

IRF6720S2TR1PBF

For Reference Only

Part Number IRF6720S2TR1PBF
PNEDA Part # IRF6720S2TR1PBF
Description MOSFET N-CH 30V 11A DIRECTFET
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 6,696
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 18 - Mar 23 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IRF6720S2TR1PBF Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIRF6720S2TR1PBF
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IRF6720S2TR1PBF, IRF6720S2TR1PBF Datasheet (Total Pages: 10, Size: 273.85 KB)
PDFIRF6720S2TRPBF Datasheet Cover
IRF6720S2TRPBF Datasheet Page 2 IRF6720S2TRPBF Datasheet Page 3 IRF6720S2TRPBF Datasheet Page 4 IRF6720S2TRPBF Datasheet Page 5 IRF6720S2TRPBF Datasheet Page 6 IRF6720S2TRPBF Datasheet Page 7 IRF6720S2TRPBF Datasheet Page 8 IRF6720S2TRPBF Datasheet Page 9 IRF6720S2TRPBF Datasheet Page 10

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IRF6720S2TR1PBF Specifications

ManufacturerInfineon Technologies
SeriesHEXFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C11A (Ta), 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs8mOhm @ 11A, 10V
Vgs(th) (Max) @ Id2.35V @ 25µA
Gate Charge (Qg) (Max) @ Vgs12nC @ 4.5V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1140pF @ 15V
FET Feature-
Power Dissipation (Max)1.7W (Ta), 17W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageDIRECTFET S1
Package / CaseDirectFET™ Isometric S1

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