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IRF6710S2TR1PBF

IRF6710S2TR1PBF

For Reference Only

Part Number IRF6710S2TR1PBF
PNEDA Part # IRF6710S2TR1PBF
Description MOSFET N-CH 25V 12A DIRECTFET
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 5,202
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 31 - Apr 5 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IRF6710S2TR1PBF Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIRF6710S2TR1PBF
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

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IRF6710S2TR1PBF Specifications

ManufacturerInfineon Technologies
SeriesHEXFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)25V
Current - Continuous Drain (Id) @ 25°C12A (Ta), 37A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs5.9mOhm @ 12A, 10V
Vgs(th) (Max) @ Id2.4V @ 25µA
Gate Charge (Qg) (Max) @ Vgs13nC @ 4.5V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1190pF @ 13V
FET Feature-
Power Dissipation (Max)1.8W (Ta), 15W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageDIRECTFET S1
Package / CaseDirectFET™ Isometric S1

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