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IRF6611TRPBF

IRF6611TRPBF

For Reference Only

Part Number IRF6611TRPBF
PNEDA Part # IRF6611TRPBF
Description MOSFET N-CH 30V 32A DIRECTFET
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 3,924
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 27 - Dec 2 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IRF6611TRPBF Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIRF6611TRPBF
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IRF6611TRPBF, IRF6611TRPBF Datasheet (Total Pages: 10, Size: 216.08 KB)
PDFIRF6611TRPBF Datasheet Cover
IRF6611TRPBF Datasheet Page 2 IRF6611TRPBF Datasheet Page 3 IRF6611TRPBF Datasheet Page 4 IRF6611TRPBF Datasheet Page 5 IRF6611TRPBF Datasheet Page 6 IRF6611TRPBF Datasheet Page 7 IRF6611TRPBF Datasheet Page 8 IRF6611TRPBF Datasheet Page 9 IRF6611TRPBF Datasheet Page 10

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IRF6611TRPBF Specifications

ManufacturerInfineon Technologies
SeriesHEXFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C32A (Ta), 150A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs2.6mOhm @ 27A, 10V
Vgs(th) (Max) @ Id2.25V @ 250µA
Gate Charge (Qg) (Max) @ Vgs56nC @ 4.5V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds4860pF @ 15V
FET Feature-
Power Dissipation (Max)3.9W (Ta), 89W (Tc)
Operating Temperature-40°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageDIRECTFET™ MX
Package / CaseDirectFET™ Isometric MX

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