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IRF6611TR1

IRF6611TR1

For Reference Only

Part Number IRF6611TR1
PNEDA Part # IRF6611TR1
Description MOSFET N-CH 30V 32A DIRECTFET
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 7,344
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 16 - Mar 21 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IRF6611TR1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIRF6611TR1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IRF6611TR1, IRF6611TR1 Datasheet (Total Pages: 9, Size: 245.78 KB)
PDFIRF6611TR1 Datasheet Cover
IRF6611TR1 Datasheet Page 2 IRF6611TR1 Datasheet Page 3 IRF6611TR1 Datasheet Page 4 IRF6611TR1 Datasheet Page 5 IRF6611TR1 Datasheet Page 6 IRF6611TR1 Datasheet Page 7 IRF6611TR1 Datasheet Page 8 IRF6611TR1 Datasheet Page 9

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IRF6611TR1 Specifications

ManufacturerInfineon Technologies
SeriesHEXFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C32A (Ta), 150A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs2.6mOhm @ 27A, 10V
Vgs(th) (Max) @ Id2.25V @ 250µA
Gate Charge (Qg) (Max) @ Vgs56nC @ 4.5V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds4860pF @ 15V
FET Feature-
Power Dissipation (Max)3.9W (Ta), 89W (Tc)
Operating Temperature-40°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageDIRECTFET™ MX
Package / CaseDirectFET™ Isometric MX

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