Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

IRF640FP

IRF640FP

For Reference Only

Part Number IRF640FP
PNEDA Part # IRF640FP
Description MOSFET N-CH 200V 18A TO-220FP
Manufacturer STMicroelectronics
Unit Price Request a Quote
In Stock 4,068
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 24 - Nov 29 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IRF640FP Resources

Brand STMicroelectronics
ECAD Module ECAD
Mfr. Part NumberIRF640FP
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IRF640FP, IRF640FP Datasheet (Total Pages: 14, Size: 332.79 KB)
PDFIRF640FP Datasheet Cover
IRF640FP Datasheet Page 2 IRF640FP Datasheet Page 3 IRF640FP Datasheet Page 4 IRF640FP Datasheet Page 5 IRF640FP Datasheet Page 6 IRF640FP Datasheet Page 7 IRF640FP Datasheet Page 8 IRF640FP Datasheet Page 9 IRF640FP Datasheet Page 10 IRF640FP Datasheet Page 11

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • IRF640FP Datasheet
  • where to find IRF640FP
  • STMicroelectronics

  • STMicroelectronics IRF640FP
  • IRF640FP PDF Datasheet
  • IRF640FP Stock

  • IRF640FP Pinout
  • Datasheet IRF640FP
  • IRF640FP Supplier

  • STMicroelectronics Distributor
  • IRF640FP Price
  • IRF640FP Distributor

IRF640FP Specifications

ManufacturerSTMicroelectronics
SeriesMESH OVERLAY™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)200V
Current - Continuous Drain (Id) @ 25°C18A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs180mOhm @ 9A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs72nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1560pF @ 25V
FET Feature-
Power Dissipation (Max)40W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220FP
Package / CaseTO-220-3 Full Pack

The Products You May Be Interested In

SSM3K72CFS,LF

Toshiba Semiconductor and Storage

Manufacturer

Toshiba Semiconductor and Storage

Series

U-MOSVII-H

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

170mA (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

3.9Ohm @ 100mA, 10V

Vgs(th) (Max) @ Id

2.1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

0.35nC @ 4.5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

17pF @ 10V

FET Feature

-

Power Dissipation (Max)

150mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SSM

Package / Case

SC-75, SOT-416

NTD15N06-001

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

15A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

90mOhm @ 7.5A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

20nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

450pF @ 25V

FET Feature

-

Power Dissipation (Max)

1.5W (Ta), 48W (Tj)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

I-PAK

Package / Case

TO-251-3 Short Leads, IPak, TO-251AA

HUFA75344G3

ON Semiconductor

Manufacturer

ON Semiconductor

Series

UltraFET™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

55V

Current - Continuous Drain (Id) @ 25°C

75A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

8mOhm @ 75A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

210nC @ 20V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

3200pF @ 25V

FET Feature

-

Power Dissipation (Max)

285W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-247-3

Package / Case

TO-247-3

Manufacturer

IXYS

Series

Polar™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

200A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

7.5mOhm @ 500mA, 10V

Vgs(th) (Max) @ Id

5V @ 8mA

Gate Charge (Qg) (Max) @ Vgs

235nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

7600pF @ 25V

FET Feature

-

Power Dissipation (Max)

680W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Chassis Mount

Supplier Device Package

SOT-227B

Package / Case

SOT-227-4, miniBLOC

VN4012L-G

Microchip Technology

Manufacturer

Microchip Technology

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

400V

Current - Continuous Drain (Id) @ 25°C

160mA (Tj)

Drive Voltage (Max Rds On, Min Rds On)

4.5V

Rds On (Max) @ Id, Vgs

12Ohm @ 100mA, 4.5V

Vgs(th) (Max) @ Id

1.8V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

110pF @ 25V

FET Feature

-

Power Dissipation (Max)

1W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-92-3

Package / Case

TO-226-3, TO-92-3 (TO-226AA)

Recently Sold

LIS3MDLTR

LIS3MDLTR

STMicroelectronics

SENSOR MR I2C/SPI 12LGA

ISL80103IRAJZ

ISL80103IRAJZ

Renesas Electronics America Inc.

IC REG LINEAR POS ADJ 3A 10DFN

W25Q64JVSFIQ

W25Q64JVSFIQ

Winbond Electronics

IC FLASH 64M SPI 133MHZ 16SOIC

MT25QU512ABB8ESF-0SIT

MT25QU512ABB8ESF-0SIT

Micron Technology Inc.

IC FLASH 512M SPI 133MHZ 16SOIC

MF-R020

MF-R020

Bourns

PTC RESET FUSE 60V 200MA RADIAL

AD8062ARZ

AD8062ARZ

Analog Devices

IC OPAMP VFB 2 CIRCUIT 8SOIC

AEDS-8011-A11

AEDS-8011-A11

Broadcom

ROTARY ENCODER OPTICAL 500PPR

LTV-352T

LTV-352T

Lite-On Inc.

OPTOISO 3.75KV DARLINGTON 4SOP

IHLP2525CZERR47M01

IHLP2525CZERR47M01

Vishay Dale

FIXED IND 470NH 17.5A 4.2 MOHM

FDS6910

FDS6910

ON Semiconductor

MOSFET 2N-CH 30V 7.5A 8SOIC

IXGX120N60B

IXGX120N60B

IXYS

IGBT 600V 200A 660W TO247

P6KE150A

P6KE150A

Taiwan Semiconductor Corporation

TVS DIODE 128V 207V DO15