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IRF630STRRPBF

IRF630STRRPBF

For Reference Only

Part Number IRF630STRRPBF
PNEDA Part # IRF630STRRPBF
Description MOSFET N-CH 200V 9A D2PAK
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 4,806
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 24 - Nov 29 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IRF630STRRPBF Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberIRF630STRRPBF
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IRF630STRRPBF, IRF630STRRPBF Datasheet (Total Pages: 9, Size: 174.19 KB)
PDFIRF630STRRPBF Datasheet Cover
IRF630STRRPBF Datasheet Page 2 IRF630STRRPBF Datasheet Page 3 IRF630STRRPBF Datasheet Page 4 IRF630STRRPBF Datasheet Page 5 IRF630STRRPBF Datasheet Page 6 IRF630STRRPBF Datasheet Page 7 IRF630STRRPBF Datasheet Page 8 IRF630STRRPBF Datasheet Page 9

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IRF630STRRPBF Specifications

ManufacturerVishay Siliconix
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)200V
Current - Continuous Drain (Id) @ 25°C9A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs400mOhm @ 5.4A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs43nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds800pF @ 25V
FET Feature-
Power Dissipation (Max)3W (Ta), 74W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD²PAK (TO-263)
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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