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IRF630NSTRLPBF

IRF630NSTRLPBF

For Reference Only

Part Number IRF630NSTRLPBF
PNEDA Part # IRF630NSTRLPBF
Description MOSFET N-CH 200V 9.3A D2PAK
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 18,432
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 19 - Mar 24 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IRF630NSTRLPBF Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIRF630NSTRLPBF
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

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IRF630NSTRLPBF Specifications

ManufacturerInfineon Technologies
SeriesHEXFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)200V
Current - Continuous Drain (Id) @ 25°C9.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs300mOhm @ 5.4A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs35nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds575pF @ 25V
FET Feature-
Power Dissipation (Max)82W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD2PAK
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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