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IRF610STRR

IRF610STRR

For Reference Only

Part Number IRF610STRR
PNEDA Part # IRF610STRR
Description MOSFET N-CH 200V 3.3A D2PAK
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 8,298
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 16 - Mar 21 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IRF610STRR Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberIRF610STRR
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IRF610STRR, IRF610STRR Datasheet (Total Pages: 8, Size: 177.91 KB)
PDFIRF610STRR Datasheet Cover
IRF610STRR Datasheet Page 2 IRF610STRR Datasheet Page 3 IRF610STRR Datasheet Page 4 IRF610STRR Datasheet Page 5 IRF610STRR Datasheet Page 6 IRF610STRR Datasheet Page 7 IRF610STRR Datasheet Page 8

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IRF610STRR Specifications

ManufacturerVishay Siliconix
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)200V
Current - Continuous Drain (Id) @ 25°C3.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs1.5Ohm @ 2A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs8.2nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds140pF @ 25V
FET Feature-
Power Dissipation (Max)3W (Ta), 36W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD2PAK
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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