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IRF5850TRPBF

IRF5850TRPBF

For Reference Only

Part Number IRF5850TRPBF
PNEDA Part # IRF5850TRPBF
Description MOSFET 2P-CH 20V 2.2A 6-TSOP
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 8,604
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 4 - Apr 9 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IRF5850TRPBF Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIRF5850TRPBF
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Arrays
Datasheet
IRF5850TRPBF, IRF5850TRPBF Datasheet (Total Pages: 9, Size: 163.25 KB)
PDFIRF5850TRPBF Datasheet Cover
IRF5850TRPBF Datasheet Page 2 IRF5850TRPBF Datasheet Page 3 IRF5850TRPBF Datasheet Page 4 IRF5850TRPBF Datasheet Page 5 IRF5850TRPBF Datasheet Page 6 IRF5850TRPBF Datasheet Page 7 IRF5850TRPBF Datasheet Page 8 IRF5850TRPBF Datasheet Page 9

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IRF5850TRPBF Specifications

ManufacturerInfineon Technologies
SeriesHEXFET®
FET Type2 P-Channel (Dual)
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C2.2A
Rds On (Max) @ Id, Vgs135mOhm @ 2.2A, 4.5V
Vgs(th) (Max) @ Id1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs5.4nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds320pF @ 15V
Power - Max960mW
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / CaseSOT-23-6 Thin, TSOT-23-6
Supplier Device Package6-TSOP

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Current - Continuous Drain (Id) @ 25°C

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Series

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FET Type

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FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

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Current - Continuous Drain (Id) @ 25°C

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Rds On (Max) @ Id, Vgs

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Vgs(th) (Max) @ Id

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Input Capacitance (Ciss) (Max) @ Vds

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Mounting Type

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Package / Case

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Supplier Device Package

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