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IRF3709LPBF

IRF3709LPBF

For Reference Only

Part Number IRF3709LPBF
PNEDA Part # IRF3709LPBF
Description MOSFET N-CH 30V 90A TO-262
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 2,124
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 18 - Apr 23 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IRF3709LPBF Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIRF3709LPBF
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

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IRF3709LPBF Specifications

ManufacturerInfineon Technologies
SeriesHEXFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C90A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs9mOhm @ 15A, 10V
Vgs(th) (Max) @ Id3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs41nC @ 5V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds2672pF @ 16V
FET Feature-
Power Dissipation (Max)3.1W (Ta), 120W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-262
Package / CaseTO-262-3 Long Leads, I²Pak, TO-262AA

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