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IRF1010NSTRR

IRF1010NSTRR

For Reference Only

Part Number IRF1010NSTRR
PNEDA Part # IRF1010NSTRR
Description MOSFET N-CH 55V 85A D2PAK
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 2,862
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 17 - Mar 22 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IRF1010NSTRR Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIRF1010NSTRR
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IRF1010NSTRR, IRF1010NSTRR Datasheet (Total Pages: 11, Size: 150.06 KB)
PDFIRF1010NSTRR Datasheet Cover
IRF1010NSTRR Datasheet Page 2 IRF1010NSTRR Datasheet Page 3 IRF1010NSTRR Datasheet Page 4 IRF1010NSTRR Datasheet Page 5 IRF1010NSTRR Datasheet Page 6 IRF1010NSTRR Datasheet Page 7 IRF1010NSTRR Datasheet Page 8 IRF1010NSTRR Datasheet Page 9 IRF1010NSTRR Datasheet Page 10 IRF1010NSTRR Datasheet Page 11

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IRF1010NSTRR Specifications

ManufacturerInfineon Technologies
SeriesHEXFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)55V
Current - Continuous Drain (Id) @ 25°C85A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs11mOhm @ 43A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs120nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds3210pF @ 25V
FET Feature-
Power Dissipation (Max)180W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD2PAK
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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