IRD3CH82DB6
For Reference Only
| Part Number | IRD3CH82DB6 |
| PNEDA Part # | IRD3CH82DB6 |
| Description | DIODE GEN PURP 1.2KV 150A DIE |
| Manufacturer | Infineon Technologies |
| Unit Price | Request a Quote |
| In Stock | 8,064 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Nov 27 - Dec 2 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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IRD3CH82DB6 Resources
| Brand | Infineon Technologies |
| ECAD Module |
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| Mfr. Part Number | IRD3CH82DB6 |
| Category | Semiconductors › Diodes & Rectifiers › Rectifiers - Single |
| Datasheet |
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- Some orders may require a minimum amount of $100.00.
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Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
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Notes
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IRD3CH82DB6 Specifications
| Manufacturer | Infineon Technologies |
| Series | - |
| Diode Type | Standard |
| Voltage - DC Reverse (Vr) (Max) | 1200V |
| Current - Average Rectified (Io) | 150A |
| Voltage - Forward (Vf) (Max) @ If | 2.7V @ 150A |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 355ns |
| Current - Reverse Leakage @ Vr | 3µA @ 1200V |
| Capacitance @ Vr, F | - |
| Mounting Type | Surface Mount |
| Package / Case | Die |
| Supplier Device Package | Die |
| Operating Temperature - Junction | -40°C ~ 150°C |
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Manufacturer Toshiba Semiconductor and Storage Series - Diode Type Standard Voltage - DC Reverse (Vr) (Max) 200V Current - Average Rectified (Io) 100mA Voltage - Forward (Vf) (Max) @ If 1.2V @ 100mA Speed Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr) 60ns Current - Reverse Leakage @ Vr 1µA @ 200V Capacitance @ Vr, F 3pF @ 0V, 1MHz Mounting Type Surface Mount Package / Case TO-236-3, SC-59, SOT-23-3 Supplier Device Package SC-59 Operating Temperature - Junction 125°C (Max) |
Manufacturer Vishay Semiconductor Diodes Division Series SUPERECTIFIER® Diode Type Standard Voltage - DC Reverse (Vr) (Max) 1000V Current - Average Rectified (Io) 1A Voltage - Forward (Vf) (Max) @ If 1.2V @ 1A Speed Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr) 750ns Current - Reverse Leakage @ Vr 10µA @ 1000V Capacitance @ Vr, F - Mounting Type Through Hole Package / Case DO-204AC, DO-15, Axial Supplier Device Package DO-204AC (DO-15) Operating Temperature - Junction -65°C ~ 175°C |
Manufacturer Rohm Semiconductor Series Automotive, AEC-Q101 Diode Type Schottky Voltage - DC Reverse (Vr) (Max) 60V Current - Average Rectified (Io) 5A Voltage - Forward (Vf) (Max) @ If - Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 4µA @ 60V Capacitance @ Vr, F - Mounting Type Surface Mount Package / Case SOD-128 Supplier Device Package PMDTM Operating Temperature - Junction 150°C (Max) |
