IRC640PBF
For Reference Only
Part Number | IRC640PBF |
PNEDA Part # | IRC640PBF |
Description | MOSFET N-CH 200V 18A TO-220-5 |
Manufacturer | Vishay Siliconix |
Unit Price | Request a Quote |
In Stock | 7,362 |
Warehouses | Shipped from Hong Kong SAR |
Estimated Delivery | Nov 25 - Nov 30 (Choose Expedited Shipping) |
Guarantee | Up to 1 year [PNEDA-Warranty]* |
Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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IRC640PBF Resources
Brand | Vishay Siliconix |
ECAD Module | |
Mfr. Part Number | IRC640PBF |
Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
Datasheet |
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Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
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Notes
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IRC640PBF Specifications
Manufacturer | Vishay Siliconix |
Series | HEXFET® |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 200V |
Current - Continuous Drain (Id) @ 25°C | 18A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 180mOhm @ 11A, 10V |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 70nC @ 10V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 1300pF @ 25V |
FET Feature | Current Sensing |
Power Dissipation (Max) | 125W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-220-5 |
Package / Case | TO-220-5 |
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