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IRC640PBF

IRC640PBF

For Reference Only

Part Number IRC640PBF
PNEDA Part # IRC640PBF
Description MOSFET N-CH 200V 18A TO-220-5
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 7,362
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 25 - Nov 30 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IRC640PBF Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberIRC640PBF
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IRC640PBF, IRC640PBF Datasheet (Total Pages: 8, Size: 228.91 KB)
PDFIRC640PBF Datasheet Cover
IRC640PBF Datasheet Page 2 IRC640PBF Datasheet Page 3 IRC640PBF Datasheet Page 4 IRC640PBF Datasheet Page 5 IRC640PBF Datasheet Page 6 IRC640PBF Datasheet Page 7 IRC640PBF Datasheet Page 8

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IRC640PBF Specifications

ManufacturerVishay Siliconix
SeriesHEXFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)200V
Current - Continuous Drain (Id) @ 25°C18A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs180mOhm @ 11A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs70nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1300pF @ 25V
FET FeatureCurrent Sensing
Power Dissipation (Max)125W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220-5
Package / CaseTO-220-5

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