IPZA60R080P7XKSA1
For Reference Only
| Part Number | IPZA60R080P7XKSA1 |
| PNEDA Part # | IPZA60R080P7XKSA1 |
| Description | MOSFET TO247-4 |
| Manufacturer | Infineon Technologies |
| Unit Price | Request a Quote |
| In Stock | 8,244 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Mar 19 - Mar 24 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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IPZA60R080P7XKSA1 Resources
| Brand | Infineon Technologies |
| ECAD Module |
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| Mfr. Part Number | IPZA60R080P7XKSA1 |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
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IPZA60R080P7XKSA1 Specifications
| Manufacturer | Infineon Technologies |
| Series | CoolMOS™ P7 |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 600V |
| Current - Continuous Drain (Id) @ 25°C | 37A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 80mOhm @ 11.8A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 590µA |
| Gate Charge (Qg) (Max) @ Vgs | 51nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 2180pF @ 400V |
| FET Feature | - |
| Power Dissipation (Max) | 129W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | PG-TO247-4 |
| Package / Case | TO-247-4 |
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Manufacturer Infineon Technologies Series SIPMOS® FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 2.9A (Ta) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 130mOhm @ 2.9A, 10V Vgs(th) (Max) @ Id 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs 33nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 875pF @ 25V FET Feature - Power Dissipation (Max) 1.8W (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PG-SOT223-4 Package / Case TO-261-4, TO-261AA |
Manufacturer STMicroelectronics Series Automotive, AEC-Q101, STripFET™ F3 FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 180A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 4.5mOhm @ 60A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 114.6nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 6665pF @ 25V FET Feature - Power Dissipation (Max) 315W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package H2PAK-6 Package / Case TO-263-7, D²Pak (6 Leads + Tab) |
Manufacturer Vishay Siliconix Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 650V Current - Continuous Drain (Id) @ 25°C 21A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 180mOhm @ 11A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 106nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 2322pF @ 100V FET Feature - Power Dissipation (Max) 208W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-247AC Package / Case TO-247-3 |
