IPW60R099C6FKSA1
For Reference Only
| Part Number | IPW60R099C6FKSA1 |
| PNEDA Part # | IPW60R099C6FKSA1 |
| Description | MOSFET N-CH 600V 37.9A TO247 |
| Manufacturer | Infineon Technologies |
| Unit Price | Request a Quote |
| In Stock | 17,040 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Mar 20 - Mar 25 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
|
Free shipping on orders over $100. PNEDA is willing to provide you with better services.
|
|
|
|
|
IPW60R099C6FKSA1 Resources
| Brand | Infineon Technologies |
| ECAD Module |
|
| Mfr. Part Number | IPW60R099C6FKSA1 |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
Payment Method
- Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
- If you need the detailed invoice or tax ID,please email us.
- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
- Please confirm the specifications of the products when ordering.
- If you have special order instructions,please note it on the ordering pages.
- Registered users can log in to the account to view the order status.
- You can email us to change the order details before shipment.
- Orders cannot be canceled after shipping the packages.
At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.
Our approach is built around proving our clients with three key advantages:
Prompt Responsiveness
Our team responds quickly to your requests, and gets to work immediately to find your parts.
Guaranteed Quality
Our quality-control processes guard against counterfeits while ensuring reliability and performance.
Global Access
Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.
Hot search vocabulary
- IPW60R099C6FKSA1 Datasheet
- where to find IPW60R099C6FKSA1
- Infineon Technologies
- Infineon Technologies IPW60R099C6FKSA1
- IPW60R099C6FKSA1 PDF Datasheet
- IPW60R099C6FKSA1 Stock
- IPW60R099C6FKSA1 Pinout
- Datasheet IPW60R099C6FKSA1
- IPW60R099C6FKSA1 Supplier
- Infineon Technologies Distributor
- IPW60R099C6FKSA1 Price
- IPW60R099C6FKSA1 Distributor
IPW60R099C6FKSA1 Specifications
| Manufacturer | Infineon Technologies |
| Series | CoolMOS™ |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 600V |
| Current - Continuous Drain (Id) @ 25°C | 37.9A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 99mOhm @ 18.1A, 10V |
| Vgs(th) (Max) @ Id | 3.5V @ 1.21mA |
| Gate Charge (Qg) (Max) @ Vgs | 119nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 2660pF @ 100V |
| FET Feature | - |
| Power Dissipation (Max) | 278W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | PG-TO247-3 |
| Package / Case | TO-247-3 |
The Products You May Be Interested In
|
Manufacturer STMicroelectronics Series PowerMESH™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 1500V Current - Continuous Drain (Id) @ 25°C 2.5A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 9Ohm @ 1.3A, 10V Vgs(th) (Max) @ Id 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 29.3nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 939pF @ 25V FET Feature - Power Dissipation (Max) 140W (Tc) Operating Temperature 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-247-3 Package / Case TO-247-3 |
Manufacturer Nexperia USA Inc. Series Automotive, AEC-Q101, TrenchMOS™ FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 6.1A (Ta) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 29mOhm @ 6.1A, 10V Vgs(th) (Max) @ Id 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 45nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 1.57nF @ 15V FET Feature - Power Dissipation (Max) 1.7W (Ta), 12.5W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package DFN2020MD-6 Package / Case 6-UDFN Exposed Pad |
Manufacturer ON Semiconductor Series QFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 500V Current - Continuous Drain (Id) @ 25°C 20A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 265mOhm @ 10A, 10V Vgs(th) (Max) @ Id 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 55nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 3290pF @ 25V FET Feature - Power Dissipation (Max) 277W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-3P Package / Case TO-3P-3, SC-65-3 |
Manufacturer Infineon Technologies Series HEXFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 14A (Ta), 60A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 7.3mOhm @ 14A, 10V Vgs(th) (Max) @ Id 2.4V @ 25µA Gate Charge (Qg) (Max) @ Vgs 17nC @ 4.5V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 1430pF @ 15V FET Feature - Power Dissipation (Max) 2.2W (Ta), 42W (Tc) Operating Temperature -40°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package DIRECTFET™ SQ Package / Case DirectFET™ Isometric SQ |
Manufacturer NXP USA Inc. Series TrenchMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 830mA (Ta) Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V Rds On (Max) @ Id, Vgs 480mOhm @ 200mA, 4.5V Vgs(th) (Max) @ Id 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs 0.89nC @ 4.5V Vgs (Max) ±8V Input Capacitance (Ciss) (Max) @ Vds 43pF @ 25V FET Feature - Power Dissipation (Max) 560mW (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package SOT-323-3 Package / Case SC-70, SOT-323 |
