Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

IPW50R250CPFKSA1

IPW50R250CPFKSA1

For Reference Only

Part Number IPW50R250CPFKSA1
PNEDA Part # IPW50R250CPFKSA1
Description MOSFET N-CH 500V 13A TO-247
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 8,874
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 19 - Apr 24 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IPW50R250CPFKSA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIPW50R250CPFKSA1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • IPW50R250CPFKSA1 Datasheet
  • where to find IPW50R250CPFKSA1
  • Infineon Technologies

  • Infineon Technologies IPW50R250CPFKSA1
  • IPW50R250CPFKSA1 PDF Datasheet
  • IPW50R250CPFKSA1 Stock

  • IPW50R250CPFKSA1 Pinout
  • Datasheet IPW50R250CPFKSA1
  • IPW50R250CPFKSA1 Supplier

  • Infineon Technologies Distributor
  • IPW50R250CPFKSA1 Price
  • IPW50R250CPFKSA1 Distributor

IPW50R250CPFKSA1 Specifications

ManufacturerInfineon Technologies
SeriesCoolMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)500V
Current - Continuous Drain (Id) @ 25°C13A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs250mOhm @ 7.8A, 10V
Vgs(th) (Max) @ Id3.5V @ 520µA
Gate Charge (Qg) (Max) @ Vgs36nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1420pF @ 100V
FET Feature-
Power Dissipation (Max)114W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackagePG-TO247-3
Package / CaseTO-247-3

The Products You May Be Interested In

AOB20C60PL

Alpha & Omega Semiconductor

Manufacturer

Alpha & Omega Semiconductor Inc.

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

20A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

260mOhm @ 10A, 10V

Vgs(th) (Max) @ Id

5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

80nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

3607pF @ 100V

FET Feature

-

Power Dissipation (Max)

463W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

TO-263 (D²Pak)

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

SIR646DP-T1-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

40V

Current - Continuous Drain (Id) @ 25°C

60A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

3.8mOhm @ 20A, 10V

Vgs(th) (Max) @ Id

2.2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

51nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2230pF @ 20V

FET Feature

-

Power Dissipation (Max)

5W (Ta), 54W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PowerPAK® SO-8

Package / Case

PowerPAK® SO-8

IRFR5305TRPBF

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

55V

Current - Continuous Drain (Id) @ 25°C

31A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

65mOhm @ 16A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

63nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1200pF @ 25V

FET Feature

-

Power Dissipation (Max)

110W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D-Pak

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

AO4402

Alpha & Omega Semiconductor

Manufacturer

Alpha & Omega Semiconductor Inc.

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

20A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

2.5V, 4.5V

Rds On (Max) @ Id, Vgs

5.5mOhm @ 20A, 4.5V

Vgs(th) (Max) @ Id

1.6V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

43nC @ 10V

Vgs (Max)

±12V

Input Capacitance (Ciss) (Max) @ Vds

4630pF @ 10V

FET Feature

-

Power Dissipation (Max)

3.1W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-SOIC

Package / Case

8-SOIC (0.154", 3.90mm Width)

IRF1404ZGPBF

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

40V

Current - Continuous Drain (Id) @ 25°C

180A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

3.7mOhm @ 75A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

150nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

4340pF @ 25V

FET Feature

-

Power Dissipation (Max)

220W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220AB

Package / Case

TO-220-3

Recently Sold

1N5618

1N5618

Semtech

DIODE GEN PURP 600V 2A AXIAL

ADUM1100ARZ

ADUM1100ARZ

Analog Devices

DGTL ISO 2.5KV GEN PURP 8SOIC

ADG406BPZ-REEL

ADG406BPZ-REEL

Analog Devices

IC MULTIPLEXER 16X1 28PLCC

CD40106BCN

CD40106BCN

ON Semiconductor

IC INVERTER SCHMITT 6CH 14DIP

TR3C107K010C0100

TR3C107K010C0100

Vishay Sprague

CAP TANT 100UF 10% 10V 2312

HSMS-2820-TR1G

HSMS-2820-TR1G

Broadcom

RF DIODE SCHOTTKY 15V SOT23-3

CDBK0540

CDBK0540

Comchip Technology

DIODE SCHOTTKY 40V 500MA SOD123F

BAT54-7-F

BAT54-7-F

Diodes Incorporated

DIODE SCHOTTKY 30V 200MA SOT23-3

IRGP4750D-EPBF

IRGP4750D-EPBF

Infineon Technologies

IGBT 650V 70A 273W TO247AD

STBB1-APUR

STBB1-APUR

STMicroelectronics

IC REG BCK BST ADJ 1.6A 10DFN

W25Q16JVSNIQ

W25Q16JVSNIQ

Winbond Electronics

IC FLASH 16M SPI 133MHZ 8SOIC

LPC1788FBD208,551

LPC1788FBD208,551

NXP

IC MCU 32BIT 512KB FLASH 208LQFP