IPU60R2K0C6BKMA1
For Reference Only
| Part Number | IPU60R2K0C6BKMA1 |
| PNEDA Part # | IPU60R2K0C6BKMA1 |
| Description | MOSFET N-CH 600V 2.4A TO-251 |
| Manufacturer | Infineon Technologies |
| Unit Price | Request a Quote |
| In Stock | 4,770 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Mar 20 - Mar 25 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
|
Free shipping on orders over $100. PNEDA is willing to provide you with better services.
|
|
|
|
|
IPU60R2K0C6BKMA1 Resources
| Brand | Infineon Technologies |
| ECAD Module |
|
| Mfr. Part Number | IPU60R2K0C6BKMA1 |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
Payment Method
- Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
- If you need the detailed invoice or tax ID,please email us.
- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
- Please confirm the specifications of the products when ordering.
- If you have special order instructions,please note it on the ordering pages.
- Registered users can log in to the account to view the order status.
- You can email us to change the order details before shipment.
- Orders cannot be canceled after shipping the packages.
At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.
Our approach is built around proving our clients with three key advantages:
Prompt Responsiveness
Our team responds quickly to your requests, and gets to work immediately to find your parts.
Guaranteed Quality
Our quality-control processes guard against counterfeits while ensuring reliability and performance.
Global Access
Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.
Hot search vocabulary
- IPU60R2K0C6BKMA1 Datasheet
- where to find IPU60R2K0C6BKMA1
- Infineon Technologies
- Infineon Technologies IPU60R2K0C6BKMA1
- IPU60R2K0C6BKMA1 PDF Datasheet
- IPU60R2K0C6BKMA1 Stock
- IPU60R2K0C6BKMA1 Pinout
- Datasheet IPU60R2K0C6BKMA1
- IPU60R2K0C6BKMA1 Supplier
- Infineon Technologies Distributor
- IPU60R2K0C6BKMA1 Price
- IPU60R2K0C6BKMA1 Distributor
IPU60R2K0C6BKMA1 Specifications
| Manufacturer | Infineon Technologies |
| Series | CoolMOS™ |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 600V |
| Current - Continuous Drain (Id) @ 25°C | 2.4A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 2Ohm @ 760mA, 10V |
| Vgs(th) (Max) @ Id | 3.5V @ 60µA |
| Gate Charge (Qg) (Max) @ Vgs | 6.7nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 140pF @ 100V |
| FET Feature | - |
| Power Dissipation (Max) | 22.3W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | PG-TO251-3 |
| Package / Case | TO-251-3 Short Leads, IPak, TO-251AA |
The Products You May Be Interested In
|
Manufacturer IXYS Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 650V Current - Continuous Drain (Id) @ 25°C 48A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 68mOhm @ 24A, 10V Vgs(th) (Max) @ Id 4.5V @ 4mA Gate Charge (Qg) (Max) @ Vgs 77nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 4420pF @ 25V FET Feature - Power Dissipation (Max) 660W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-247 Package / Case TO-247-3 |
Manufacturer Nexperia USA Inc. Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 7.4A (Ta) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 21mOhm @ 7.4A, 10V Vgs(th) (Max) @ Id 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 14.4nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 588pF @ 15V FET Feature - Power Dissipation (Max) 820mW (Ta), 8.33W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package SC-73 Package / Case TO-261-4, TO-261AA |
Manufacturer Vishay Siliconix Series TrenchFET® Gen IV FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 45.6A (Ta), 186A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 1.5mOhm @ 20A, 10V Vgs(th) (Max) @ Id 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 135nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 5900pF @ 30V FET Feature - Power Dissipation (Max) 6.25W (Ta), 104W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PowerPAK® SO-8 Package / Case PowerPAK® SO-8 |
Manufacturer Vishay Siliconix Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 200V Current - Continuous Drain (Id) @ 25°C 9A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 400mOhm @ 5.4A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 43nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 800pF @ 25V FET Feature - Power Dissipation (Max) 3W (Ta), 74W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package D²PAK (TO-263) Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Manufacturer Microsemi Corporation Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 142A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 11mOhm @ 71A, 10V Vgs(th) (Max) @ Id 4V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs 300nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 8600pF @ 25V FET Feature - Power Dissipation (Max) 450W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Chassis Mount Supplier Device Package SOT-227 Package / Case SOT-227-4, miniBLOC |
