IPU60R1K5CEBKMA1
For Reference Only
| Part Number | IPU60R1K5CEBKMA1 |
| PNEDA Part # | IPU60R1K5CEBKMA1 |
| Description | MOSFET N-CH 600V TO-251-3 |
| Manufacturer | Infineon Technologies |
| Unit Price | Request a Quote |
| In Stock | 4,212 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Apr 4 - Apr 9 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
|
Free shipping on orders over $100. PNEDA is willing to provide you with better services.
|
|
|
|
|
IPU60R1K5CEBKMA1 Resources
| Brand | Infineon Technologies |
| ECAD Module |
|
| Mfr. Part Number | IPU60R1K5CEBKMA1 |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
Payment Method
- Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
- If you need the detailed invoice or tax ID,please email us.
- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
- Please confirm the specifications of the products when ordering.
- If you have special order instructions,please note it on the ordering pages.
- Registered users can log in to the account to view the order status.
- You can email us to change the order details before shipment.
- Orders cannot be canceled after shipping the packages.
At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.
Our approach is built around proving our clients with three key advantages:
Prompt Responsiveness
Our team responds quickly to your requests, and gets to work immediately to find your parts.
Guaranteed Quality
Our quality-control processes guard against counterfeits while ensuring reliability and performance.
Global Access
Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.
Hot search vocabulary
- IPU60R1K5CEBKMA1 Datasheet
- where to find IPU60R1K5CEBKMA1
- Infineon Technologies
- Infineon Technologies IPU60R1K5CEBKMA1
- IPU60R1K5CEBKMA1 PDF Datasheet
- IPU60R1K5CEBKMA1 Stock
- IPU60R1K5CEBKMA1 Pinout
- Datasheet IPU60R1K5CEBKMA1
- IPU60R1K5CEBKMA1 Supplier
- Infineon Technologies Distributor
- IPU60R1K5CEBKMA1 Price
- IPU60R1K5CEBKMA1 Distributor
IPU60R1K5CEBKMA1 Specifications
| Manufacturer | Infineon Technologies |
| Series | CoolMOS™ CE |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 600V |
| Current - Continuous Drain (Id) @ 25°C | 3.1A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 1.5Ohm @ 1.1A, 10V |
| Vgs(th) (Max) @ Id | 3.5V @ 90µA |
| Gate Charge (Qg) (Max) @ Vgs | 9.4nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 200pF @ 100V |
| FET Feature | - |
| Power Dissipation (Max) | 28W (Tc) |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-251 |
| Package / Case | TO-251-3 Short Leads, IPak, TO-251AA |
The Products You May Be Interested In
|
Manufacturer Infineon Technologies Series HEXFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 15A (Ta), 66A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 6.8mOhm @ 15A, 10V Vgs(th) (Max) @ Id 2.55V @ 250µA Gate Charge (Qg) (Max) @ Vgs 17nC @ 4.5V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 1520pF @ 10V FET Feature - Power Dissipation (Max) 2.2W (Ta), 42W (Tc) Operating Temperature -40°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package DIRECTFET™ SQ Package / Case DirectFET™ Isometric SQ |
Manufacturer Infineon Technologies Series StrongIRFET™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 200V Current - Continuous Drain (Id) @ 25°C 100A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 11.5mOhm @ 60A, 10V Vgs(th) (Max) @ Id 4V @ 270µA Gate Charge (Qg) (Max) @ Vgs 102nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 5094pF @ 50V FET Feature - Power Dissipation (Max) 313W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package TO-247AC Package / Case TO-247-3 |
Manufacturer Rohm Semiconductor Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 15A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 300mOhm @ 7.5A, 10V Vgs(th) (Max) @ Id 4.15V @ 1mA Gate Charge (Qg) (Max) @ Vgs 50nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 1700pF @ 25V FET Feature - Power Dissipation (Max) 110W (Tc) Operating Temperature 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-3PF Package / Case TO-3P-3 Full Pack |
Manufacturer Toshiba Semiconductor and Storage Series U-MOSVIII-H FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 32A (Ta) Drive Voltage (Max Rds On, Min Rds On) 6.5V, 10V Rds On (Max) @ Id, Vgs 4.6mOhm @ 16A, 10V Vgs(th) (Max) @ Id 4V @ 500µA Gate Charge (Qg) (Max) @ Vgs 49nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 3965pF @ 30V FET Feature - Power Dissipation (Max) 1.6W (Ta), 63W (Tc) Operating Temperature 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 8-SOP Advance (5x5) Package / Case 8-PowerVDFN |
Manufacturer Series NexFET™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 14.4A (Ta) Drive Voltage (Max Rds On, Min Rds On) 6V, 10V Rds On (Max) @ Id, Vgs 59mOhm @ 5A, 10V Vgs(th) (Max) @ Id 3.8V @ 250µA Gate Charge (Qg) (Max) @ Vgs 5.6nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 454pF @ 50V FET Feature - Power Dissipation (Max) 2.5W (Ta), 20.2W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 6-WSON (2x2) Package / Case 6-WDFN Exposed Pad |
