IPU50R1K4CEAKMA1
For Reference Only
| Part Number | IPU50R1K4CEAKMA1 |
| PNEDA Part # | IPU50R1K4CEAKMA1 |
| Description | MOSFET N-CH 500V 3.1A TO-251 |
| Manufacturer | Infineon Technologies |
| Unit Price | Request a Quote |
| In Stock | 6,066 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Apr 4 - Apr 9 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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IPU50R1K4CEAKMA1 Resources
| Brand | Infineon Technologies |
| ECAD Module |
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| Mfr. Part Number | IPU50R1K4CEAKMA1 |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
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Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
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IPU50R1K4CEAKMA1 Specifications
| Manufacturer | Infineon Technologies |
| Series | CoolMOS™ CE |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 500V |
| Current - Continuous Drain (Id) @ 25°C | 3.1A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 13V |
| Rds On (Max) @ Id, Vgs | 1.4Ohm @ 900mA, 13V |
| Vgs(th) (Max) @ Id | 3.5V @ 70µA |
| Gate Charge (Qg) (Max) @ Vgs | 8.2nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 178pF @ 100V |
| FET Feature | - |
| Power Dissipation (Max) | 42W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | PG-TO251-3 |
| Package / Case | TO-251-3 Short Leads, IPak, TO-251AA |
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Manufacturer EPC Series eGaN® FET Type N-Channel Technology GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss) 80V Current - Continuous Drain (Id) @ 25°C 6.8A (Ta) Drive Voltage (Max Rds On, Min Rds On) 5V Rds On (Max) @ Id, Vgs 25mOhm @ 6A, 5V Vgs(th) (Max) @ Id 2.5V @ 2mA Gate Charge (Qg) (Max) @ Vgs 2.4nC @ 5V Vgs (Max) +6V, -4V Input Capacitance (Ciss) (Max) @ Vds 210pF @ 40V FET Feature - Power Dissipation (Max) - Operating Temperature -40°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package Die Package / Case Die |
Manufacturer Alpha & Omega Semiconductor Inc. Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 13A (Ta), 90A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 7mOhm @ 20A, 10V Vgs(th) (Max) @ Id 3.9V @ 250µA Gate Charge (Qg) (Max) @ Vgs 53nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 3430pF @ 50V FET Feature - Power Dissipation (Max) 2.1W (Ta), 267W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package TO-263 (D²Pak) Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Manufacturer Infineon Technologies Series OptiMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 120A (Tc) Drive Voltage (Max Rds On, Min Rds On) 6V, 10V Rds On (Max) @ Id, Vgs 3mOhm @ 100A, 10V Vgs(th) (Max) @ Id 3.8V @ 184µA Gate Charge (Qg) (Max) @ Vgs 139nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 10300pF @ 50V FET Feature - Power Dissipation (Max) 250W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package PG-TO220-3 Package / Case TO-220-3 |
