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IPT60R080G7XTMA1

IPT60R080G7XTMA1

For Reference Only

Part Number IPT60R080G7XTMA1
PNEDA Part # IPT60R080G7XTMA1
Description MOSFET N-CH 650V 29A HSOF-8
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 21,252
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 20 - Mar 25 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IPT60R080G7XTMA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIPT60R080G7XTMA1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

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IPT60R080G7XTMA1 Specifications

ManufacturerInfineon Technologies
SeriesCoolMOS™ G7
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)650V
Current - Continuous Drain (Id) @ 25°C29A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs80mOhm @ 9.7A, 10V
Vgs(th) (Max) @ Id4V @ 490µA
Gate Charge (Qg) (Max) @ Vgs42nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1640pF @ 400V
FET Feature-
Power Dissipation (Max)167W (Tc)
Operating Temperature-40°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-HSOF-8-2
Package / Case8-PowerSFN

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