IPS110N12N3GBKMA1
For Reference Only
| Part Number | IPS110N12N3GBKMA1 |
| PNEDA Part # | IPS110N12N3GBKMA1 |
| Description | MOSFET N-CH 120V 75A TO251-3 |
| Manufacturer | Infineon Technologies |
| Unit Price | Request a Quote |
| In Stock | 2,430 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Mar 19 - Mar 24 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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IPS110N12N3GBKMA1 Resources
| Brand | Infineon Technologies |
| ECAD Module |
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| Mfr. Part Number | IPS110N12N3GBKMA1 |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
| Datasheet |
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IPS110N12N3GBKMA1 Specifications
| Manufacturer | Infineon Technologies |
| Series | OptiMOS™ |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 120V |
| Current - Continuous Drain (Id) @ 25°C | 75A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 11mOhm @ 75A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 83µA |
| Gate Charge (Qg) (Max) @ Vgs | 65nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 4310pF @ 60V |
| FET Feature | - |
| Power Dissipation (Max) | 136W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | PG-TO251-3 |
| Package / Case | TO-251-3 Stub Leads, IPak |
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Manufacturer Vishay Siliconix Series TrenchFET® FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 4.4A (Ta) Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V Rds On (Max) @ Id, Vgs 45mOhm @ 4.4A, 4.5V Vgs(th) (Max) @ Id 1.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 22nC @ 4.5V Vgs (Max) ±12V Input Capacitance (Ciss) (Max) @ Vds - FET Feature - Power Dissipation (Max) 1.3W (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 1206-8 ChipFET™ Package / Case 8-SMD, Flat Lead |
