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IPS110N12N3GBKMA1

IPS110N12N3GBKMA1

For Reference Only

Part Number IPS110N12N3GBKMA1
PNEDA Part # IPS110N12N3GBKMA1
Description MOSFET N-CH 120V 75A TO251-3
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 2,430
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 21 - Mar 26 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IPS110N12N3GBKMA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIPS110N12N3GBKMA1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IPS110N12N3GBKMA1, IPS110N12N3GBKMA1 Datasheet (Total Pages: 11, Size: 587.97 KB)
PDFIPD110N12N3GBUMA1 Datasheet Cover
IPD110N12N3GBUMA1 Datasheet Page 2 IPD110N12N3GBUMA1 Datasheet Page 3 IPD110N12N3GBUMA1 Datasheet Page 4 IPD110N12N3GBUMA1 Datasheet Page 5 IPD110N12N3GBUMA1 Datasheet Page 6 IPD110N12N3GBUMA1 Datasheet Page 7 IPD110N12N3GBUMA1 Datasheet Page 8 IPD110N12N3GBUMA1 Datasheet Page 9 IPD110N12N3GBUMA1 Datasheet Page 10 IPD110N12N3GBUMA1 Datasheet Page 11

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IPS110N12N3GBKMA1 Specifications

ManufacturerInfineon Technologies
SeriesOptiMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)120V
Current - Continuous Drain (Id) @ 25°C75A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs11mOhm @ 75A, 10V
Vgs(th) (Max) @ Id4V @ 83µA
Gate Charge (Qg) (Max) @ Vgs65nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds4310pF @ 60V
FET Feature-
Power Dissipation (Max)136W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackagePG-TO251-3
Package / CaseTO-251-3 Stub Leads, IPak

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