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IPS090N03LGAKMA1

IPS090N03LGAKMA1

For Reference Only

Part Number IPS090N03LGAKMA1
PNEDA Part # IPS090N03LGAKMA1
Description MOSFET N-CH 30V 40A TO251-3
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 8,316
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 20 - Mar 25 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IPS090N03LGAKMA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIPS090N03LGAKMA1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IPS090N03LGAKMA1, IPS090N03LGAKMA1 Datasheet (Total Pages: 12, Size: 1,332.59 KB)
PDFIPU090N03L G Datasheet Cover
IPU090N03L G Datasheet Page 2 IPU090N03L G Datasheet Page 3 IPU090N03L G Datasheet Page 4 IPU090N03L G Datasheet Page 5 IPU090N03L G Datasheet Page 6 IPU090N03L G Datasheet Page 7 IPU090N03L G Datasheet Page 8 IPU090N03L G Datasheet Page 9 IPU090N03L G Datasheet Page 10 IPU090N03L G Datasheet Page 11

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IPS090N03LGAKMA1 Specifications

ManufacturerInfineon Technologies
SeriesOptiMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C40A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs9mOhm @ 30A, 10V
Vgs(th) (Max) @ Id2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs15nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1600pF @ 15V
FET Feature-
Power Dissipation (Max)42W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackagePG-TO251-3
Package / CaseTO-251-3 Stub Leads, IPak

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