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IPS04N03LA G

IPS04N03LA G

For Reference Only

Part Number IPS04N03LA G
PNEDA Part # IPS04N03LA-G
Description MOSFET N-CH 25V 50A IPAK
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 6,786
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 16 - Mar 21 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IPS04N03LA G Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIPS04N03LA G
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IPS04N03LA G, IPS04N03LA G Datasheet (Total Pages: 12, Size: 529.28 KB)
PDFIPU04N03LA G Datasheet Cover
IPU04N03LA G Datasheet Page 2 IPU04N03LA G Datasheet Page 3 IPU04N03LA G Datasheet Page 4 IPU04N03LA G Datasheet Page 5 IPU04N03LA G Datasheet Page 6 IPU04N03LA G Datasheet Page 7 IPU04N03LA G Datasheet Page 8 IPU04N03LA G Datasheet Page 9 IPU04N03LA G Datasheet Page 10 IPU04N03LA G Datasheet Page 11

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IPS04N03LA G Specifications

ManufacturerInfineon Technologies
SeriesOptiMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)25V
Current - Continuous Drain (Id) @ 25°C50A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs4mOhm @ 50A, 10V
Vgs(th) (Max) @ Id2V @ 80µA
Gate Charge (Qg) (Max) @ Vgs41nC @ 5V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds5199pF @ 15V
FET Feature-
Power Dissipation (Max)115W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackagePG-TO251-3
Package / CaseTO-251-3 Stub Leads, IPak

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