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IPP80R600P7XKSA1

IPP80R600P7XKSA1

For Reference Only

Part Number IPP80R600P7XKSA1
PNEDA Part # IPP80R600P7XKSA1
Description MOSFET N-CH 800V 8A TO220-3
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 17,100
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 20 - Mar 25 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IPP80R600P7XKSA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIPP80R600P7XKSA1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IPP80R600P7XKSA1, IPP80R600P7XKSA1 Datasheet (Total Pages: 13, Size: 951.86 KB)
PDFIPP80R600P7XKSA1 Datasheet Cover
IPP80R600P7XKSA1 Datasheet Page 2 IPP80R600P7XKSA1 Datasheet Page 3 IPP80R600P7XKSA1 Datasheet Page 4 IPP80R600P7XKSA1 Datasheet Page 5 IPP80R600P7XKSA1 Datasheet Page 6 IPP80R600P7XKSA1 Datasheet Page 7 IPP80R600P7XKSA1 Datasheet Page 8 IPP80R600P7XKSA1 Datasheet Page 9 IPP80R600P7XKSA1 Datasheet Page 10 IPP80R600P7XKSA1 Datasheet Page 11

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IPP80R600P7XKSA1 Specifications

ManufacturerInfineon Technologies
SeriesCoolMOS™ P7
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)800V
Current - Continuous Drain (Id) @ 25°C8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs600mOhm @ 3.4A, 10V
Vgs(th) (Max) @ Id3.5V @ 170µA
Gate Charge (Qg) (Max) @ Vgs20nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds570pF @ 500V
FET Feature-
Power Dissipation (Max)60W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackagePG-TO220-3
Package / CaseTO-220-3

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