IPP65R420CFDXKSA2
For Reference Only
| Part Number | IPP65R420CFDXKSA2 |
| PNEDA Part # | IPP65R420CFDXKSA2 |
| Description | LOW POWER_LEGACY |
| Manufacturer | Infineon Technologies |
| Unit Price | Request a Quote |
| In Stock | 7,074 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Nov 29 - Dec 4 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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IPP65R420CFDXKSA2 Resources
| Brand | Infineon Technologies |
| ECAD Module |
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| Mfr. Part Number | IPP65R420CFDXKSA2 |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
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Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
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Notes
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IPP65R420CFDXKSA2 Specifications
| Manufacturer | Infineon Technologies |
| Series | CoolMOS™ CFD2 |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 650V |
| Current - Continuous Drain (Id) @ 25°C | 8.7A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 420mOhm @ 3.4A, 10V |
| Vgs(th) (Max) @ Id | 4.5V @ 300µA |
| Gate Charge (Qg) (Max) @ Vgs | 31.5nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 870pF @ 100V |
| FET Feature | - |
| Power Dissipation (Max) | 83.3W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | PG-TO220-3 |
| Package / Case | TO-220-3 |
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Manufacturer Panasonic Electronic Components Series - FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 100mA (Ta) Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4V Rds On (Max) @ Id, Vgs 18Ohm @ 10mA, 4V Vgs(th) (Max) @ Id 1.5V @ 1µA Gate Charge (Qg) (Max) @ Vgs - Vgs (Max) ±12V Input Capacitance (Ciss) (Max) @ Vds 12pF @ 3V FET Feature - Power Dissipation (Max) 100mW (Ta) Operating Temperature 125°C (TJ) Mounting Type Surface Mount Supplier Device Package SSSMini3-F2 Package / Case SOT-723 |
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Manufacturer Toshiba Semiconductor and Storage Series U-MOSVI FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 2A (Ta) Drive Voltage (Max Rds On, Min Rds On) 4V, 10V Rds On (Max) @ Id, Vgs 150mOhm @ 2A, 10V Vgs(th) (Max) @ Id 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 3.4nC @ 4.5V Vgs (Max) +20V, -25V Input Capacitance (Ciss) (Max) @ Vds 159pF @ 15V FET Feature - Power Dissipation (Max) 600mW (Ta) Operating Temperature 150°C Mounting Type Surface Mount Supplier Device Package S-Mini Package / Case TO-236-3, SC-59, SOT-23-3 |
