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IPP65R125C7XKSA1

IPP65R125C7XKSA1

For Reference Only

Part Number IPP65R125C7XKSA1
PNEDA Part # IPP65R125C7XKSA1
Description MOSFET N-CH 650V 18A TO220
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 2,952
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 27 - Dec 2 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IPP65R125C7XKSA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIPP65R125C7XKSA1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

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IPP65R125C7XKSA1 Specifications

ManufacturerInfineon Technologies
SeriesCoolMOS™ C7
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)650V
Current - Continuous Drain (Id) @ 25°C18A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs125mOhm @ 8.9A, 10V
Vgs(th) (Max) @ Id4V @ 440µA
Gate Charge (Qg) (Max) @ Vgs35nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1670pF @ 400V
FET Feature-
Power Dissipation (Max)101W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackagePG-TO220-3
Package / CaseTO-220-3

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