IPP042N03LGXKSA1
For Reference Only
| Part Number | IPP042N03LGXKSA1 |
| PNEDA Part # | IPP042N03LGXKSA1 |
| Description | MOSFET N-CH 30V 70A TO-220-3 |
| Manufacturer | Infineon Technologies |
| Unit Price | Request a Quote |
| In Stock | 18,684 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Nov 30 - Dec 5 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
|
Free shipping on orders over $100. PNEDA is willing to provide you with better services.
|
|
|
|
|
IPP042N03LGXKSA1 Resources
| Brand | Infineon Technologies |
| ECAD Module |
|
| Mfr. Part Number | IPP042N03LGXKSA1 |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
Payment Method
- Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
- If you need the detailed invoice or tax ID,please email us.
- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
- Please confirm the specifications of the products when ordering.
- If you have special order instructions,please note it on the ordering pages.
- Registered users can log in to the account to view the order status.
- You can email us to change the order details before shipment.
- Orders cannot be canceled after shipping the packages.
At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.
Our approach is built around proving our clients with three key advantages:
Prompt Responsiveness
Our team responds quickly to your requests, and gets to work immediately to find your parts.
Guaranteed Quality
Our quality-control processes guard against counterfeits while ensuring reliability and performance.
Global Access
Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.
Hot search vocabulary
- IPP042N03LGXKSA1 Datasheet
- where to find IPP042N03LGXKSA1
- Infineon Technologies
- Infineon Technologies IPP042N03LGXKSA1
- IPP042N03LGXKSA1 PDF Datasheet
- IPP042N03LGXKSA1 Stock
- IPP042N03LGXKSA1 Pinout
- Datasheet IPP042N03LGXKSA1
- IPP042N03LGXKSA1 Supplier
- Infineon Technologies Distributor
- IPP042N03LGXKSA1 Price
- IPP042N03LGXKSA1 Distributor
IPP042N03LGXKSA1 Specifications
| Manufacturer | Infineon Technologies |
| Series | OptiMOS™ |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 70A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 4.2mOhm @ 30A, 10V |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 38nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 3900pF @ 15V |
| FET Feature | - |
| Power Dissipation (Max) | 79W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | PG-TO220-3 |
| Package / Case | TO-220-3 |
The Products You May Be Interested In
|
Manufacturer Vishay Siliconix Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 40V Current - Continuous Drain (Id) @ 25°C 100A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 3.6mOhm @ 20A, 10V Vgs(th) (Max) @ Id 3.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 105nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 6700pF @ 25V FET Feature - Power Dissipation (Max) 136W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package TO-252AA Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 |
Manufacturer Vishay Siliconix Series TrenchFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 40A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 2.8mOhm @ 20A, 10V Vgs(th) (Max) @ Id 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 56nC @ 10V Vgs (Max) +20V, -16V Input Capacitance (Ciss) (Max) @ Vds 2815pF @ 15V FET Feature - Power Dissipation (Max) - Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PowerPAK® SO-8 Package / Case PowerPAK® SO-8 |
Manufacturer Infineon Technologies Series HEXFET® FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 38A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 60mOhm @ 38A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 230nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 2780pF @ 25V FET Feature - Power Dissipation (Max) 3.1W (Ta), 170W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package D2PAK Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Manufacturer Vishay Siliconix Series TrenchFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 60A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 6.6mOhm @ 20A, 10V Vgs(th) (Max) @ Id 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs 80nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 2866pF @ 50V FET Feature - Power Dissipation (Max) 104W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PowerPAK® SO-8 Package / Case PowerPAK® SO-8 |
Manufacturer Alpha & Omega Semiconductor Inc. Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 10A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 700mOhm @ 5A, 10V Vgs(th) (Max) @ Id 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 35nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 1346pF @ 100V FET Feature - Power Dissipation (Max) 43W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220-3F Package / Case TO-220-3 Full Pack |
