IPN80R600P7ATMA1
For Reference Only
| Part Number | IPN80R600P7ATMA1 |
| PNEDA Part # | IPN80R600P7ATMA1 |
| Description | COOLMOS P7 800V SOT-223 |
| Manufacturer | Infineon Technologies |
| Unit Price | Request a Quote |
| In Stock | 5,310 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Mar 18 - Mar 23 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
|
Free shipping on orders over $100. PNEDA is willing to provide you with better services.
|
|
|
|
|
IPN80R600P7ATMA1 Resources
| Brand | Infineon Technologies |
| ECAD Module |
|
| Mfr. Part Number | IPN80R600P7ATMA1 |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
Payment Method
- Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
- If you need the detailed invoice or tax ID,please email us.
- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
- Please confirm the specifications of the products when ordering.
- If you have special order instructions,please note it on the ordering pages.
- Registered users can log in to the account to view the order status.
- You can email us to change the order details before shipment.
- Orders cannot be canceled after shipping the packages.
At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.
Our approach is built around proving our clients with three key advantages:
Prompt Responsiveness
Our team responds quickly to your requests, and gets to work immediately to find your parts.
Guaranteed Quality
Our quality-control processes guard against counterfeits while ensuring reliability and performance.
Global Access
Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.
Hot search vocabulary
- IPN80R600P7ATMA1 Datasheet
- where to find IPN80R600P7ATMA1
- Infineon Technologies
- Infineon Technologies IPN80R600P7ATMA1
- IPN80R600P7ATMA1 PDF Datasheet
- IPN80R600P7ATMA1 Stock
- IPN80R600P7ATMA1 Pinout
- Datasheet IPN80R600P7ATMA1
- IPN80R600P7ATMA1 Supplier
- Infineon Technologies Distributor
- IPN80R600P7ATMA1 Price
- IPN80R600P7ATMA1 Distributor
IPN80R600P7ATMA1 Specifications
| Manufacturer | Infineon Technologies |
| Series | CoolMOS™ P7 |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 800V |
| Current - Continuous Drain (Id) @ 25°C | 8A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 600mOhm @ 3.4A, 10V |
| Vgs(th) (Max) @ Id | 3.5V @ 170µA |
| Gate Charge (Qg) (Max) @ Vgs | 20nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 570pF @ 500V |
| FET Feature | - |
| Power Dissipation (Max) | 7.4W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PG-SOT223 |
| Package / Case | TO-261-3 |
The Products You May Be Interested In
|
Manufacturer ON Semiconductor Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 15A (Tc) Drive Voltage (Max Rds On, Min Rds On) 5V Rds On (Max) @ Id, Vgs 100mOhm @ 7.5A, 5V Vgs(th) (Max) @ Id 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 20nC @ 5V Vgs (Max) ±10V Input Capacitance (Ciss) (Max) @ Vds 440pF @ 25V FET Feature - Power Dissipation (Max) 48.4W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package D2PAK Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Manufacturer Infineon Technologies Series OptiMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 27A (Ta), 145A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 2.4mOhm @ 30A, 10V Vgs(th) (Max) @ Id 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 72nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 4900pF @ 15V FET Feature - Power Dissipation (Max) 2.8W (Ta), 78W (Tc) Operating Temperature -40°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package MG-WDSON-2, CanPAK M™ Package / Case 3-WDSON |
Manufacturer Infineon Technologies Series HEXFET® FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 4.6A (Ta) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 70mOhm @ 4.6A, 10V Vgs(th) (Max) @ Id 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs 40nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 870pF @ 10V FET Feature - Power Dissipation (Max) 2.5W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 8-SO Package / Case 8-SOIC (0.154", 3.90mm Width) |
Manufacturer Infineon Technologies Series HEXFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 55A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 19mOhm @ 33A, 10V Vgs(th) (Max) @ Id 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs 50nC @ 4.5V Vgs (Max) ±16V Input Capacitance (Ciss) (Max) @ Vds 1600pF @ 25V FET Feature - Power Dissipation (Max) 107W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package D-Pak Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 |
Manufacturer Diodes Incorporated Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 60A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 5.5mOhm @ 30A, 10V Vgs(th) (Max) @ Id 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs 42nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 2000pF @ 15V FET Feature - Power Dissipation (Max) 2W (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PowerDI3333-8 Package / Case 8-PowerVDFN |
