IPN80R2K4P7ATMA1
For Reference Only
| Part Number | IPN80R2K4P7ATMA1 |
| PNEDA Part # | IPN80R2K4P7ATMA1 |
| Description | COOLMOS P7 800V SOT-223 |
| Manufacturer | Infineon Technologies |
| Unit Price | Request a Quote |
| In Stock | 24,840 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Nov 24 - Nov 29 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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IPN80R2K4P7ATMA1 Resources
| Brand | Infineon Technologies |
| ECAD Module |
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| Mfr. Part Number | IPN80R2K4P7ATMA1 |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
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IPN80R2K4P7ATMA1 Specifications
| Manufacturer | Infineon Technologies |
| Series | CoolMOS™ P7 |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 800V |
| Current - Continuous Drain (Id) @ 25°C | 2.5A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 2.4Ohm @ 800mA, 10V |
| Vgs(th) (Max) @ Id | 3.5V @ 40µA |
| Gate Charge (Qg) (Max) @ Vgs | 7.5nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 150pF @ 500V |
| FET Feature | - |
| Power Dissipation (Max) | 6.3W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PG-SOT223 |
| Package / Case | TO-261-3 |
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Manufacturer STMicroelectronics Series MDmesh™ M2-EP FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 13A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs - Vgs(th) (Max) @ Id 4.75V @ 250µA Gate Charge (Qg) (Max) @ Vgs 22nC @ 10V Vgs (Max) - Input Capacitance (Ciss) (Max) @ Vds - FET Feature - Power Dissipation (Max) - Operating Temperature 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220FP Package / Case TO-220-3 Full Pack |
Manufacturer ON Semiconductor Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 220mA (Ta) Drive Voltage (Max Rds On, Min Rds On) - Rds On (Max) @ Id, Vgs 6Ohm @ 220mA, 10V Vgs(th) (Max) @ Id 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs 2nC @ 10V Vgs (Max) - Input Capacitance (Ciss) (Max) @ Vds 60pF @ 25V FET Feature - Power Dissipation (Max) - Operating Temperature - Mounting Type Through Hole Supplier Device Package TO-92-3 Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Manufacturer Alpha & Omega Semiconductor Inc. Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 15A (Ta) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 4.6mOhm @ 20A, 10V Vgs(th) (Max) @ Id 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 112nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 6800pF @ 15V FET Feature - Power Dissipation (Max) 1.7W (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 8-SOIC Package / Case 8-SOIC (0.154", 3.90mm Width) |
