IPN80R1K4P7ATMA1
For Reference Only
| Part Number | IPN80R1K4P7ATMA1 |
| PNEDA Part # | IPN80R1K4P7ATMA1 |
| Description | MOSFET N-CHANNEL 800V 4A SOT223 |
| Manufacturer | Infineon Technologies |
| Unit Price | Request a Quote |
| In Stock | 3,474 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Mar 18 - Mar 23 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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IPN80R1K4P7ATMA1 Resources
| Brand | Infineon Technologies |
| ECAD Module |
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| Mfr. Part Number | IPN80R1K4P7ATMA1 |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
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IPN80R1K4P7ATMA1 Specifications
| Manufacturer | Infineon Technologies |
| Series | CoolMOS™ P7 |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 800V |
| Current - Continuous Drain (Id) @ 25°C | 4A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 1.4Ohm @ 1.4A, 10V |
| Vgs(th) (Max) @ Id | 3.5V @ 70µA |
| Gate Charge (Qg) (Max) @ Vgs | 10nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 250pF @ 500V |
| FET Feature | - |
| Power Dissipation (Max) | 7W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PG-SOT223 |
| Package / Case | TO-261-3 |
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Manufacturer Alpha & Omega Semiconductor Inc. Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 12A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 550mOhm @ 6A, 10V Vgs(th) (Max) @ Id 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 50nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 2100pF @ 25V FET Feature - Power Dissipation (Max) 50W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220-3F Package / Case TO-220-3 Full Pack |
Manufacturer Vishay Siliconix Series TrenchFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 150V Current - Continuous Drain (Id) @ 25°C 75A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 18mOhm @ 20A, 10V Vgs(th) (Max) @ Id 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 100nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 4180pF @ 75V FET Feature - Power Dissipation (Max) 3.12W (Ta), 312.5W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package TO-263 (D2Pak) Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Manufacturer ON Semiconductor Series UltraFET™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 55V Current - Continuous Drain (Id) @ 25°C 20A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 36mOhm @ 20A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 44nC @ 20V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 680pF @ 25V FET Feature - Power Dissipation (Max) 93W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package I-PAK Package / Case TO-251-3 Short Leads, IPak, TO-251AA |
