IPN70R1K4P7SATMA1
For Reference Only
| Part Number | IPN70R1K4P7SATMA1 |
| PNEDA Part # | IPN70R1K4P7SATMA1 |
| Description | MOSFET N-CHANNEL 700V 4A SOT223 |
| Manufacturer | Infineon Technologies |
| Unit Price | Request a Quote |
| In Stock | 42,864 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Mar 19 - Mar 24 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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IPN70R1K4P7SATMA1 Resources
| Brand | Infineon Technologies |
| ECAD Module |
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| Mfr. Part Number | IPN70R1K4P7SATMA1 |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
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IPN70R1K4P7SATMA1 Specifications
| Manufacturer | Infineon Technologies |
| Series | CoolMOS™ P7 |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 700V |
| Current - Continuous Drain (Id) @ 25°C | 4A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 1.4Ohm @ 700mA, 10V |
| Vgs(th) (Max) @ Id | 3.5V @ 40µA |
| Gate Charge (Qg) (Max) @ Vgs | 4.7nC @ 10V |
| Vgs (Max) | ±16V |
| Input Capacitance (Ciss) (Max) @ Vds | 158pF @ 400V |
| FET Feature | - |
| Power Dissipation (Max) | 6.2W (Tc) |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PG-SOT223 |
| Package / Case | TO-261-3 |
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Manufacturer IXYS Series HiPerFET™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 480V Current - Continuous Drain (Id) @ 25°C 80A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 45mOhm @ 500mA, 10V Vgs(th) (Max) @ Id 4V @ 8mA Gate Charge (Qg) (Max) @ Vgs 380nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 9890pF @ 25V FET Feature - Power Dissipation (Max) 700W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Chassis Mount Supplier Device Package SOT-227B Package / Case SOT-227-4, miniBLOC |
Manufacturer Taiwan Semiconductor Corporation Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 150V Current - Continuous Drain (Id) @ 25°C 1.4A (Tc) Drive Voltage (Max Rds On, Min Rds On) 6V, 10V Rds On (Max) @ Id, Vgs 480mOhm @ 1.1A, 10V Vgs(th) (Max) @ Id 3.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 8nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 332pF @ 10V FET Feature - Power Dissipation (Max) 2.1W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package SOT-26 Package / Case SOT-23-6 |
Manufacturer Infineon Technologies Series HEXFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 1.6A (Ta) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 220mOhm @ 1.6A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 8nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 160pF @ 25V FET Feature - Power Dissipation (Max) 1W (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package SOT-223 Package / Case TO-261-4, TO-261AA |
